Power field-effect transistor and manufacturing method
US-12593466-B2 · Mar 31, 2026 · US
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Wirths Stephan patents
Wirths Stephan is listed as an inventor on 25 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wirths Stephan |
| Total patents | 25 |
| First publication | Dec 19, 2019 |
| Latest publication | Mar 31, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Superjunction power semiconductor device and method for manufacturing a superjunction power semiconductor device
US-2026013174-A1 · Jan 8, 2026 · US
Manufacturing method for a power semiconductor device and power semiconductor device
US-12513978-B2 · Dec 30, 2025 · US
Manufacturing method for a power semiconductor device and power semiconductor device
US-2025372375-A1 · Dec 4, 2025 · US
Method for producing a semiconductor device and semiconductor device
US-2025359142-A1 · Nov 20, 2025 · US
Power semiconductor device and method for producing a power semiconductor device
US-2025359140-A1 · Nov 20, 2025 · US
Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof
US-12426343-B2 · Sep 23, 2025 · US
Power semiconductor device and method for producing a power semiconductor device
US-2025275176-A1 · Aug 28, 2025 · US
Quick start for ieds
US-2025261443-A1 · Aug 14, 2025 · US
Strain enhanced SiC power semiconductor device and method of manufacturing
US-12113131-B2 · Oct 8, 2024 · US
Recent patents
Latest publications not already listed above.
Silicon carbide transistor device
US-12062698-B2 · Aug 13, 2024 · US
Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device
US-2024222462-A1 · Jul 4, 2024 · US
Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the same
US-11967616-B2 · Apr 23, 2024 · US
Silicon carbide power device and method for manufacturing the same
US-2024079454-A1 · Mar 7, 2024 · US
Power semiconductor device and method for manufacturing a power semiconductor device
US-2024055495-A1 · Feb 15, 2024 · US
Power field-effect transistor and manufacturing method
US-2023411510-A1 · Dec 21, 2023 · US
Power semiconductor device
US-2023411514-A1 · Dec 21, 2023 · US
Insulated Gate Structure, Wide Bandgap Material Power Device With the Same and Manufacturing Method Thereof
US-2023187525-A1 · Jun 15, 2023 · US
Strain Enhanced SiC Power Semiconductor Device and Method of Manufacturing
US-2022302309-A1 · Sep 22, 2022 · US
Silicon Carbide Transistor Device
US-2022278205-A1 · Sep 1, 2022 · US
A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Manufacturing the Same
US-2022028976-A1 · Jan 27, 2022 · US
Plasmonic quantum well laser
US-10965101-B2 · Mar 30, 2021 · US
Plasmonic quantum well laser
US-2020083667-A1 · Mar 12, 2020 · US
Plasmonic quantum well laser
US-10566764-B2 · Feb 18, 2020 · US
Plasmonic quantum well laser
US-2019386453-A1 · Dec 19, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Hitachi Energy Ltd | 13 |
| Hitachi Energy Switzerland Ag | 8 |
| IBM | 4 |
| Abb Power Grids Switzerland Ag | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8325 | 18 |
| H10D30/66 | 12 |
| H10D12/441 | 12 |
| H01L29/1608 | 11 |
| H10D30/668 | 8 |