Plasmonic quantum well laser
US-10566764-B2 · Feb 18, 2020 · US
Plasmonic quantum well laser
US10965101B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10965101-B2 |
| Application number | US-201916683783-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 14, 2019 |
| Priority date | Jun 18, 2018 |
| Publication date | Mar 30, 2021 |
| Grant date | Mar 30, 2021 |
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- Title
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Abstract
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A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.
First claim
Opening claim text (preview).
What is claimed is: 1. A plasmonic quantum well laser comprising a plasmonic waveguide, said plasmonic quantum well laser comprising: a p-n junction structure extending orthogonally to a direction of plasmon propagation along said plasmonic waveguide, wherein said p-n junction is buried within a dielectric material having a lower refractive index than material building said p-n junction, wherein said plasmonic quantum well laser is electrically actuated, wherein said plasmonic waveguide is positioned atop the dielectric material. 2. The plasmonic quantum well laser of claim 1 , wherein the plasmonic waveguide is a thin 2-D layer. 3. The plasmonic quantum well laser of claim 1 , wherein the plasmonic waveguide is a nano-wire. 4. The plasmonic quantum well laser of claim 1 , wherein the plasmonic waveguide is a nano-tube. 5. The plasmonic quantum well laser of claim 1 , wherein said semiconductor quantum well laser is a result of a template assisted selective epitaxy process. 6. The plasmonic quantum well laser of claim 1 , wherein said dielectric material comprises SiO2. 7. The plasmonic quantum well laser of claim 1 , wherein the plasmon propagation is concentrated over a recombination area of the p-n junction. 8. The plasmonic quantum well laser of claim 1 , wherein a thin dielectric material separates the p-n junction from the plasmonic waveguide.
Assignees
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Classifications
Silicon based substrates · CPC title
AIIBVI compounds · CPC title
in AIIBVI compounds, e.g. ZnCdSe- laser · CPC title
Edge-emitting structures · CPC title
Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)} · CPC title
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- What does patent US10965101B2 cover?
- A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01S5/1046. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 30 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).