Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
US-12439627-B2 · Oct 7, 2025 · US
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Vishwanath Suresh patents
Vishwanath Suresh is listed as an inventor on 23 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Vishwanath Suresh |
| Total patents | 23 |
| First publication | Oct 1, 2020 |
| Latest publication | Oct 7, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Integrated circuit structures including a titanium silicide material
US-12402387-B2 · Aug 26, 2025 · US
High aspect ratio source or drain structures with abrupt dopant profile
US-12288808-B2 · Apr 29, 2025 · US
Substrate-less vertical diode integrated circuit structures
US-12154898-B2 · Nov 26, 2024 · US
Integrated circuit structures including a titanium silicide material
US-2024332392-A1 · Oct 3, 2024 · US
Integrated circuit structures including a titanium silicide material
US-12046654-B2 · Jul 23, 2024 · US
Source or drain structures with high germanium concentration capping layer
US-12027417-B2 · Jul 2, 2024 · US
Source or drain structures with low resistivity
US-12027585-B2 · Jul 2, 2024 · US
High aspect ratio source or drain structures with abrupt dopant profile
US-2024014268-A1 · Jan 11, 2024 · US
High aspect ratio source or drain structures with abrupt dopant profile
US-11804523-B2 · Oct 31, 2023 · US
Recent patents
Latest publications not already listed above.
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
US-2023197840-A1 · Jun 22, 2023 · US
Source or drain structures with low resistivity
US-2023197785-A1 · Jun 22, 2023 · US
Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistors
US-2023132548-A1 · May 4, 2023 · US
Source or drain structures with low resistivity
US-11621325-B2 · Apr 4, 2023 · US
Source or drain structures with phosphorous and arsenic co-dopants
US-11552169-B2 · Jan 10, 2023 · US
Substrate-less vertical diode integrated circuit structures
US-2022199615-A1 · Jun 23, 2022 · US
Integrated circuit structures including a titanium silicide material
US-2021408258-A1 · Dec 30, 2021 · US
Source or drain structures with high germanium concentration capping layer
US-2021407851-A1 · Dec 30, 2021 · US
Source or drain structures with high surface germanium concentration
US-2021408275-A1 · Dec 30, 2021 · US
Transition metal-iii-nitride alloys for robust high performance hemts
US-2021399119-A1 · Dec 23, 2021 · US
High aspect ration source or drain structures with abrupt dopant profile
US-2021091181-A1 · Mar 25, 2021 · US
Source or drain structures with low resistivity
US-2020312959-A1 · Oct 1, 2020 · US
Source or drain structures with phosphorous and arsenic co-dopants
US-2020312958-A1 · Oct 1, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 23 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/62 | 19 |
| H10D30/43 | 18 |
| H10D62/121 | 18 |
| H10D84/834 | 17 |
| H10D62/151 | 17 |