Memory Circuitry and Method Used in Forming Memory Circuitry
US-2026040555-A1 · Feb 5, 2026 · US
This page is not indexed by search engines while we improve data quality.
Mcteer Everett A patents
Mcteer Everett A is listed as an inventor on 86 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Mcteer Everett A |
| Total patents | 86 |
| First publication | Feb 2, 2016 |
| Latest publication | Feb 5, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Methods of forming microelectronic devices including stack structures having doped interfacial regions
US-2026006856-A1 · Jan 1, 2026 · US
Transistor and Memory Circuitry Comprising Strings of Memory Cells
US-2025359282-A1 · Nov 20, 2025 · US
Methods used in forming memory arrays having strings of memory cells
US-12471281-B2 · Nov 11, 2025 · US
Microelectronic devces and memory devices
US-2025336826-A1 · Oct 30, 2025 · US
Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods
US-12432984-B2 · Sep 30, 2025 · US
Microelectronic devices including barrier structures, and related memory devices
US-2025293164-A1 · Sep 18, 2025 · US
Memory Arrays Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
US-2025279142-A1 · Sep 4, 2025 · US
Transistor and memory circuitry comprising strings of memory cells
US-12408414-B2 · Sep 2, 2025 · US
Microelectronic devices, memory devices, and electronic systems
US-12381153-B2 · Aug 5, 2025 · US
Recent patents
Latest publications not already listed above.
Apparatuses including interconnect structures including dielectric material surrounded by conductive material, and related memory devices
US-12368101-B2 · Jul 22, 2025 · US
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
US-12322443-B2 · Jun 3, 2025 · US
Microelectronic devices and memory devices including conductive levels having varying compositions
US-12170250-B2 · Dec 17, 2024 · US
Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures
US-2024407160-A1 · Dec 5, 2024 · US
Memories having vertically stacked conductive filled structures
US-12114492-B2 · Oct 8, 2024 · US
Apparatuses including interconnect structures including dielectric material surrounded by conductive material, and related memory devices
US-2024290722-A1 · Aug 29, 2024 · US
Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material
US-12034057-B2 · Jul 9, 2024 · US
Apparatuses including a conductive contact including a dielectric material surrounded by a conductive material
US-12002759-B2 · Jun 4, 2024 · US
Assemblies having conductive structures with three or more different materials
US-11990528-B2 · May 21, 2024 · US
Microelectronic devices including staircase structures, and related memory devices and electronic systems
US-2024153877-A1 · May 9, 2024 · US
Microelectronic devices including staircase structures, and related memory devices and electronic systems
US-11894305-B2 · Feb 6, 2024 · US
Microelectronic devices comprising a boron-containing material, and related electronic systems and methods
US-2023397424-A1 · Dec 7, 2023 · US
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
US-2023395149-A1 · Dec 7, 2023 · US
Memory Circuitry And Method Used In Forming Memory Circuitry
US-2023389313-A1 · Nov 30, 2023 · US
Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods
US-2023387229-A1 · Nov 30, 2023 · US
Conductive interconnects
US-11742282-B2 · Aug 29, 2023 · US
Assemblies having conductive structures with three or more different materials
US-11705500-B2 · Jul 18, 2023 · US
Semiconductor devices comprising threshold switching materials
US-11672191-B2 · Jun 6, 2023 · US
Microelectronic devices and memory devices including conductive levels having varying compositions
US-2023154856-A1 · May 18, 2023 · US
Assemblies Having Conductive Structures with Three or More Different Materials
US-2023121315-A1 · Apr 20, 2023 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Micron Technology Inc | 79 |
| Lodestar Licensing Group Llc | 7 |
| Hu Yongjun Jeff | 1 |
| Mcteer Everett A | 1 |
| Smythe Iii John A | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.