Memories having vertically stacked conductive filled structures

Patent metadata

Field	Value
Publication number	US-12114492-B2
Application number	US-202017071980-A
Country	US
Kind code	B2
Filing date	Oct 15, 2020
Priority date	Dec 20, 2017
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

Some embodiments include a method in which an assembly is formed to have voids within a stack, and to have slits adjacent the voids. Peripheral boundaries of the voids have proximal regions near the slits and distal regions adjacent the proximal regions. A material is deposited within the voids under conditions which cause the material to form to a greater thickness along the distal regions than along the proximal regions. Some embodiments include an assembly having a stack of alternating first and second levels. The second levels include conductive material. Panel structures extend through the stack. The conductive material within the second levels has outer edges with proximal regions near the panel structures and distal regions adjacent the proximal regions. Interface material is along the outer edges of the conductive material and has a different composition along the proximal regions than along the distal regions.

First claim

We claim:

1. An assembly, comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conductive core in the distal and proximal regions; and
a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions wherein the liner of seed material exists in the proximal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition.

2. The assembly of claim 1 wherein the liner of seed material surrounds an entirety of the conductive core in the distal regions.

3. The assembly of claim 1 wherein the liner of seed material surrounds at least a portion of the conductive core in the proximal regions.

4. The assembly of claim 1 wherein the liner of seed material surrounds only a portion of the conductive core in the proximal regions.

5. The assembly of claim 1 wherein the liner of seed material does not surround any portion of the conductive core in the proximal regions.

6. The assembly of claim 1 wherein the liner of seed material surrounds at least a portion of the conductive core in both of the proximal and distal regions, the liner of seed material being thicker in the distal regions.

7. The assembly of claim 1 wherein the liner of seed material surrounds at least a portion of the conductive core in the distal regions.

8. The assembly of claim 1 wherein the conductive core is thicker in the distal regions than in the proximal regions.

9. The assembly of claim 1 wherein the second composition is configured as a laminate over the first composition.

10. The assembly of claim 1 wherein the second composition is configured as a gradient of material over the first composition.

11. The assembly of claim 10 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition.

12. An assembly comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conductive core in the distal and proximal regions;
a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; and

wherein the liner of seed material exists in the distal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition.

13. The assembly of claim 12 wherein the second composition is configured as a laminate over the first composition.

14. The assembly of claim 12 wherein the second composition is configured as a gradient of material over the first composition.

15. The assembly of claim 14 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition.

16. The assembly of claim 1 further comprising an insulative panel extending through the stack.

17. An assembly, comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conductive core in the distal and proximal regions;
a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; and

wherein the liner of seed material exists in both of the distal and proximal regions, the liner in the distal regions comprising a composition different from a composition of the liner in the proximal regions.

18. An assembly, comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conductive core in the distal and proximal regions; and
a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions;

wherein the liner of seed material exists in the proximal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition.

19. The assembly of claim 18 wherein the second composition is configured as a laminate over the first composition.

20. The assembly of claim 18 wherein the second composition is configured as a gradient of material over the first composition.

21. The assembly of claim 20 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition.

22. An assembly, comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conductive core in the distal and proximal regions; and
a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions;

wherein the liner of seed material exists in the distal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition.

23. The assembly of claim 22 wherein the second composition is configured as a laminate over the first composition.

24. The assembly of claim 22 wherein the second composition is configured as a gradient of material over the first composition.

25. The assembly of claim 24 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition.

26. An assembly, comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conduc

Assignees

• Micron Technology Inc

Inventors

• Greenlee Jordan D
• Meldrim John Mark
• Mcteer Everett A

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10B41/10

  characterised by the top-view layout · CPC title

• H10B43/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title