Semiconductor devices comprising threshold switching materials

Patent metadata

Field	Value
Publication number	US-11672191-B2
Application number	US-202117162071-A
Country	US
Kind code	B2
Filing date	Jan 29, 2021
Priority date	Sep 3, 2014
Publication date	Jun 6, 2023
Grant date	Jun 6, 2023

Abstract

A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a threshold switching material comprising a chalcogenide material between a first electrode and a second electrode;
a dielectric material between the threshold switching material and the first electrode, the dielectric material doped with oxygen, sulfur, carbon, fluorine, or a metal; and
an additional dielectric material between the threshold switching material and the second electrode.

2. The semiconductor device of claim 1 , wherein the dielectric material comprises titanium oxide.

3. The semiconductor device of claim 1 , wherein the first electrode comprises a carbon-containing material.

4. The semiconductor device of claim 1 , wherein the dielectric material comprises aluminum oxide.

5. The semiconductor device of claim 1 , wherein the dielectric material has a thickness of about 10 Å.

6. The semiconductor device of claim 1 , wherein the additional dielectric material comprises the same material composition as the dielectric material.

7. The semiconductor device of claim 1 , further comprising a memory material comprising one or more of a metal, a metal oxide, and a magnetoresistive material on a side of the second electrode opposite the threshold switching material.

8. A semiconductor device, comprising:
a threshold switching material between a first electrode and a second electrode; and
a doped dielectric material between the threshold switching material and the first electrode, the dielectric material comprising at least one of aluminum silicon oxide, strontium oxide, barium oxide, strontium titanium oxide, iridium oxide, titanium oxide, tantalum oxide, zirconium oxide, niobium oxide, and molybdenum oxide.

9. The semiconductor device of claim 8 , wherein a thickness of the dielectric material is between about 5 Å and about 10 Å.

10. The semiconductor device of claim 8 , wherein the dielectric material has a thickness of one monolayer.

11. The semiconductor device of claim 8 , further comprising an additional dielectric material on sidewalls of the threshold switching material.

12. A semiconductor device, comprising:
a threshold switching material between a first electrode and a second electrode;
a doped dielectric material between the threshold switching material and the first electrode; and
a memory material on a side of the second electrode opposite the threshold switching material.

13. The semiconductor device of claim 12 , wherein the doped dielectric material comprises the dielectric material doped with a metal.

14. The semiconductor device of claim 12 , wherein the doped dielectric material is doped with at least one of oxygen, sulfur, carbon, and fluorine.

15. The semiconductor device of claim 12 , further comprising an additional dielectric material between the threshold switching material and the second electrode and exhibiting a different material composition than the doped dielectric material.

16. A semiconductor device, comprising:
a threshold switching material between a first electrode and a second electrode; and
doped titanium dioxide between the threshold switching material and at least one of the first electrode and the second electrode.

17. The semiconductor device of claim 16 , further comprising a dielectric material on a side of the threshold switching material opposite the at least one of the first electrode and the second electrode.

18. The semiconductor device of claim 16 , wherein the at least one of the first electrode and the second electrode comprises carbon.

19. The semiconductor device of claim 16 , wherein the doped titanium dioxide exhibits a gradient of the dopant across a thickness of the titanium dioxide.

20. The semiconductor device of claim 16 ,
further comprising additional titanium dioxide between the threshold switching material and the at least one of the first electrode and the second electrode, the additional titanium dioxide undoped.

Assignees

• Micron Technology Inc

Inventors

• Chan Tsz W
• Ramaswamy D V Nirmal
• Tao Qian
• Hu Yongjun J
• Mcteer Everett A

Classifications

• H10N70/882

  Compounds of sulfur, selenium or tellurium, e.g. chalcogenides · CPC title

• H10N70/20

  Multistable switching devices, e.g. memristors · CPC title

• H10B63/24 Primary

  of the Ovonic threshold switching type · CPC title

• H10N70/884

  based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883) · CPC title

• H10N70/841

  Electrodes · CPC title