Metal compounds and methods of fabricating semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-11524973-B2
Application number	US-202016857292-A
Country	US
Kind code	B2
Filing date	Apr 24, 2020
Priority date	May 14, 2019
Publication date	Dec 13, 2022
Grant date	Dec 13, 2022

Abstract

Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

First claim

That which is claimed is:

1. A metal compound comprising a material of Chemical Formula 1:

wherein:
M is Nb or Ta;
R is a substituted or unsubstituted C3 to C10 alkyl group; and
X 1 , X 2 , X 3 , X 4 , and X 5 are each independently selected from F, Cl, Br, and I, and
wherein when M is Nb, and R is an unsubstituted C4 alkyl group, then at least one of X 1 , X 2 , X 3 , X 4 , and X 5 is not Cl.

2. The metal compound of claim 1 , wherein X 1 , X 2 , X 3 , X 4 , and X 5 are each independently F or Cl.

3. The metal compound of claim 1 , wherein R is a substituted or unsubstituted C3 to C5 alkyl group.

4. The metal compound of claim 3 , wherein R is a butyl group.

5. The metal compound of claim 4 , wherein R is a sec-butyl group.

6. The metal compound of claim 1 , wherein M is Nb.

7. The metal compound of claim 1 , wherein X 1 , X 2 , X 3 , X 4 , and X 5 are each F.

8. The metal compound of claim 1 , wherein the material of Chemical Formula 1 has a melting point in a range of −50° C. to 60° C.

9. The metal compound of claim 1 , wherein R is an unsubstituted C3 to C10 alkyl group or a halogen-substituted C3 to C10 alkyl group.

10. A method of fabricating a semiconductor device, the method comprising:
providing a deposition precursor; and
forming a layer with the deposition precursor,
wherein the deposition precursor includes a metal compound comprising a material of Chemical Formula 1:

wherein:
M is Nb or Ta;
R is a substituted or unsubstituted C3 to C10 alkyl group; and
X 1 , X 2 , X 3 , X 4 , and X 5 are each independently selected from F, Cl, Br, and I.

11. The method of claim 10 , wherein the deposition precursor has a melting point in a range of −50° C. to 60° C.

12. The method of claim 11 , wherein providing the deposition precursor comprises providing the deposition precursor in a precursor storage unit; and the method further comprises transferring the deposition precursor from the precursor storage unit through a supply pipe to a precursor supply unit.

13. The method of claim 10 , wherein the layer includes niobium (Nb) or tantalum (Ta), and the layer is devoid of carbon.

14. The method of claim 10 , further comprising:
forming on the layer a plurality of lower electrode pillars to fabricate a lower electrode structure;
forming a dielectric layer on the lower electrode structure; and
forming an upper electrode on the dielectric layer.

15. The method of claim 10 , wherein forming the layer with the deposition precursor comprises:
supplying a chamber including a substrate with the deposition precursor to form a precursor layer on the substrate; and
contacting a reaction gas to the precursor layer.

16. The method of claim 10 , wherein X 1 , X 2 , X 3 , X 4 , and X 5 are each independently F or Cl.

17. The method of claim 10 , wherein R is a substituted or unsubstituted C3 to C5 alkyl group.

18. The method of claim 10 , wherein M is Nb, R is a butyl group, and X 1 , X 2 , X 3 , X 4 , and X 5 are each F.

19. The metal compound of claim 1 , wherein when M is Nb, and each of X 1 , X 2 , X 3 , X 4 , and X 5 is Cl, then R is a substituted C3 to C10 alkyl group.

20. The metal compound of claim 1 , wherein when M is Nb, and each of X 1 , X 2 , X 3 , X 4 , and X 5 is Cl, then R is a halogen-substituted C3 to C10 alkyl group.

Assignees

• Samsung Electronics Co Ltd
• Adeka Corp

Inventors

• Ryu Seung-Min
• Saito Akio
• Koide Takanori
• Yamashita Atsushi
• Harano Kazuki
• Park Gyu-Hee
• Lee Soyoung
• Lim Jaesoon
• Cho Younjoung

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• C07F9/005 Primary

  Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages · CPC title

• H01L28/60

  Electricity · mapped topic

• H01L21/28568

  Electricity · mapped topic

• H10D1/692 Primary

  Electrodes · CPC title