Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
US-12590274-B2 · Mar 31, 2026 · US
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Klipp Andreas patents
Klipp Andreas is listed as an inventor on 57 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Klipp Andreas |
| Total patents | 57 |
| First publication | Jan 6, 2015 |
| Latest publication | Mar 31, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Use of a composition and a process for selectively etching silicon
US-12525464-B2 · Jan 13, 2026 · US
Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below
US-12518960-B2 · Jan 6, 2026 · US
Composition, its use and a process for cleaning substrates comprising cobalt and copper
US-2025305152-A1 · Oct 2, 2025 · US
Etching composition and method for manufacturing semiconductor device using the same
US-2025277149-A1 · Sep 4, 2025 · US
Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt
US-12331239-B2 · Jun 17, 2025 · US
Composition, its use and a process for selectively etching silicon-germanium material
US-2025115809-A1 · Apr 10, 2025 · US
Composition, its use and a process for selectively etching silicon-germanium material
US-2025109332-A1 · Apr 3, 2025 · US
Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
US-12084628-B2 · Sep 10, 2024 · US
Use of a composition and a process for selectively etching silicon
US-2024282584-A1 · Aug 22, 2024 · US
Recent patents
Latest publications not already listed above.
Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN
US-12024693-B2 · Jul 2, 2024 · US
Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt
US-2024093089-A1 · Mar 21, 2024 · US
Composition, Its Use And A Process For Removing Post-Etch Residues
US-2023340370-A1 · Oct 26, 2023 · US
Composition, Its Use And A Process For Selectively Etching Silicon-Germanium Material
US-2023326759-A1 · Oct 12, 2023 · US
Composition Comprising a Siloxane and an Alkane for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below
US-2023274930-A1 · Aug 31, 2023 · US
Cleavable additives for use in a method of making a semiconductor substrate
US-11742197-B2 · Aug 29, 2023 · US
Use of a Composition Consisting of Ammonia and an Alkanol for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below
US-2023235252-A1 · Jul 27, 2023 · US
Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
US-2023167381-A1 · Jun 1, 2023 · US
Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
US-2022220421-A1 · Jul 14, 2022 · US
Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process
US-11377624-B2 · Jul 5, 2022 · US
Composition comprising an ammonia-activated siloxane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
US-2022169956-A1 · Jun 2, 2022 · US
Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
US-11180719-B2 · Nov 23, 2021 · US
Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
US-11168239-B2 · Nov 9, 2021 · US
Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process
US-2021301221-A1 · Sep 30, 2021 · US
IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN
US-2021189298-A1 · Jun 24, 2021 · US
Cleavable additives for use in a method of making a semiconductor substrate
US-2021166934-A1 · Jun 3, 2021 · US
Composition for post chemical-mechanical-polishing cleaning
US-10865361-B2 · Dec 15, 2020 · US
Composition for post chemical-mechanical-polishing cleaning
US-10844325-B2 · Nov 24, 2020 · US
Composition for post chemical-mechanical-polishing cleaning
US-10844333-B2 · Nov 24, 2020 · US
Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt
US-2020339523-A1 · Oct 29, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Basf Se | 57 |
| Klipp Andreas | 8 |
| Mellies Raimund | 3 |
| Samsung Electronics Co Ltd | 1 |
| Bafs Se | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C11D2111/22 | 38 |
| C11D11/0047 | 25 |
| H10P70/20 | 17 |
| C09K13/00 | 13 |
| G03F7/425 | 12 |