Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors

Patent metadata

Field	Value
Publication number	US-11168239-B2
Application number	US-202016860793-A
Country	US
Kind code	B2
Filing date	Apr 28, 2020
Priority date	Jul 11, 2013
Publication date	Nov 9, 2021
Grant date	Nov 9, 2021

Abstract

A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

First claim

The invention claimed is:

1. A chemical-mechanical polishing (CMP) composition comprising:
(A) one or more compounds of formula (1):

wherein the pairs of dashed lines in formula (1) either each represent a double bond or each represent a single bond, wherein
(i) when each pair of dashed lines in formula (1) represents a double bond then one of R 1 and R 2 is hydrogen and the other of R 1 and R 2 is selected from the group consisting of chlorine, bromine, alkyl with three to six carbon atoms, benzoyl and —COOR 3 , wherein R 3 is selected from the group consisting of alkyls with three to six carbon atoms or R 3 is a substituent comprising a structural unit selected from the group consisting of —(CH 2 —CH 2 —O) n —H and —(CH 2 —CH 2 —O) n —CH 3 , wherein n in each case is an integer in the range of from 1 to 15, or R 1 and R 2 are both independently selected from the group consisting of bromine and chlorine, and
(ii) when each pair of dashed lines in formula (1-) represents a single bond then R 1 and R 2 are hydrogen, or one of R 1 and R 2 is hydrogen and the other of R 1 and R 2 is selected from the group consisting of chlorine, bromine, alkyl with three to six carbon atoms, benzoyl and —COOR 3 wherein R 3 is selected from the group consisting of alkyls with three to six carbon atoms or R 3 is a substituent comprising a structural unit selected from the group consisting of —(CH 2 —CH 2 —O) n —H and —(CH 2 —CH 2 —O) n —CH 3 , wherein n in each case is an integer in the range of from 1 to 15, or R 1 and R 2 are both independently selected from the group consisting of bromine and chlorine; and
(B) between 0.002 wt % to 7 wt % of colloidal silica particles, having a mean particle size ranging from 35 to 135 nm,
wherein the pH of the CMP composition ranges from 9.5 to 14, and
wherein the total amount of cations selected from the group consisting of magnesium and calcium is less than 1 ppm based on the total weight of the respective CMP composition.

2. The chemical-mechanical composition according to claim 1 , wherein (A) the one or at least one of the more than one compounds of formula (1) is selected from the group consisting of
5-bromo-1H-benzotriazole,
5-tert-butyl-1H-benzotriazole,
5 (benzoyl) 1H benzotriazole,
5,6-dibromo-1H-benzotriazole,
5-chloro-1H-benzotriazole,
5-sec-butyl-1H-benzotriazole,
4,5,6,7-tetrahydro-1H-benzotriazole.

3. The chemical-mechanical composition according to claim 1 , wherein said composition further comprises particles selected from the group consisting of alumina, ceria, copper oxide, iron oxide, nickel oxide, manganese oxide, silica, silicon nitride, silicon carbide, tin oxide, titania, titanium carbide, tungsten oxide, yttrium oxide, zirconia and mixtures and composites thereof.

4. The chemical-mechanical composition according to claim 1 , further comprising
(C) one or more complexing agents selected from the group consisting of inorganic acids and their salts and organic acids and their salts.

5. The chemical-mechanical composition according to claim 1 , further comprising
(D) one or more non-ionic surfactants.

6. The chemical-mechanical composition according to claim 5 , wherein (D) is an amphiphilic non-ionic surfactant.

7. The chemical-mechanical composition according to claim 1 , wherein, further comprising
(E) one or more alcohols.

8. The chemical-mechanical composition according to claim 7 , wherein (E) is selected from the group consisting of ethanediol, propanediol, and butanediol.

9. The chemical-mechanical composition according to claim 1 , further comprising
(F) one or more oxidizing agents.

10. The chemical-mechanical composition according to claim 9 ,
wherein (F) is selected from the group consisting of a peroxide, a persulfate, a perchlorate, a perbromate, a periodate, and a permanganate.

11. The chemical-mechanical composition according to claim 1 , further comprising
(I) one or more buffer.

12. The chemical-mechanical composition according to claim 11 ,
wherein (I) is selected from the group consisting of potassium carbonate and potassium hydrogen carbonate.

13. The chemical-mechanical composition according to claim 1 , wherein said composition has a pH value in the range of from 9.5 to 13.

14. The chemical-mechanical composition according to claim 1 , wherein the chemical-mechanical polishing composition is produced by mixing
(H) one or more pH adjusting agents
with the constituents (A), (B) and optionally one or more additional of constituents (C), (D), (E), (F) and (I), wherein:
(C) one or more complexing agents selected from the group consisting of inorganic acids and their salts and organic acids and their salts,
(D) one or more non-ionic surfactants,
(E) one or more alcohols,
(F) one or more oxidizing agents, and
(I) one or more buffer.

15. The chemical-mechanical composition according to claim 14 , wherein (H) is selected from the group consisting of nitric acid, sulfuric acid, ammonia, tetramethylammonium hydroxide, sodium hydroxide and potassium hydroxide.

16. The chemical-mechanical composition according to claim 1 , comprising
(A) a total amount of one or more compounds of formula (1) in a range of from 0.0001% to 1 wt.-% based on the total weight of the respective CMP composition,
and/or
(B) a total amount of inorganic particles, organic particles, or a composite or mixture thereof in a range of from 0.002 to 10 wt.-% based on the total weight of the respective CMP composition,
and/or
(C) a total amount of one or more complexing agents selected from the group of organic acids and salts thereof in a range of from 0.001 to 10 wt.-% based on the total weight of the respective CMP composition,
and/or
(D) a total amount of one or more non-ionic surfactants in a range of from 0.00001 to 10 wt.-% based on the total weight of the respective CMP composition,
and/or
(E) a total amount of one or more alcohols in a range of from 0.001 to 10 wt.-% based on the total weight of the respective CMP composition,
and/or
(F) a total amount of one or more oxidizing agents in a range of from 0.01 to 20 wt.-% based on the total weight of the respective CMP composition,
and/or
(I) a total amount of one or more buffers in a range of from 0.001 to 10 wt.-% based on the total weight of the respective CMP composition.

17. The chemical-mechanical composition according to claim 1 , wherein the CMP composition contains cations selected from the group consisting of magnesium and calcium in a total amount of less than 0.9 ppm based on the total weight of the respective CMP composition.

Assignees

• Basf Se

Inventors

• Reichardt Robert
• Kaller Martin
• Lauter Michael
• Li Yuzhuo
• Klipp Andreas

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title