Composition for post chemical-mechanical-polishing cleaning

Patent metadata

Field	Value
Publication number	US-10844333-B2
Application number	US-201616064686-A
Country	US
Kind code	B2
Filing date	Dec 20, 2016
Priority date	Dec 22, 2015
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

First claim

The invention claimed is:

1. A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising:
(A) one or more nonionic polymers selected from the group consisting of polyacrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof,

wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R 2 is hydrogen or methyl, and n is an integer,
(B) a poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and
(C) water,
wherein the pH of the composition is in the range of from 7.0 to 10.5,
wherein the total amount of the one or more nonionic polymers is in a range of from 0.1 wt. % to 7.5 wt. %,
wherein the total amount of the poly(acrylic acid) (PAA) and acrylic acid-maleic acid copolymer is in a range of from 0.1 wt. % to 7.5 wt. %,
wherein the post-CMP cleaning composition is capable of removing post-CMP residues without deleteriously affecting of semiconductor integrated circuits.

2. The composition according to claim 1 , wherein the pH of the composition is in the range of from 7.5 to 10.

3. The composition according to claim 1 , wherein said nonionic polymer (A) is selected from the group consisting of polypropylene oxides (PPO), polypropylene glycols, polyethylene oxides (PEO), and polyethylene glycols (PEG).

4. The composition according to claim 1 , wherein said polymer (B) is an acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol.

5. The composition according to claim 1 , further comprising
(E) one or more defoamers.

6. The composition according to claim 1 , further comprising
(F) a base.

7. The composition according to claim 1 , wherein all constituents of the cleaning composition are in a liquid phase.

8. The composition according to claim 1 , wherein the composition is a post chemical-mechanical-polishing (post-CMP) cleaning composition concentrate, comprising:
(A) a total amount of the one or more nonionic polymers in a range of from 0.1 to 5.0 wt.-%, based on the total weight of the composition, and
(B) a total amount of the poly(acrylic acid) (PAA) and acrylic acid-maleic acid copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition.

9. The composition according to claim 1 , further comprising
(D) one or more corrosion inhibitors.

10. The composition according to claim 9 , wherein the corrosion inhibitors (D) are selected from the group consisting of acetylcysteine, N-acyl-sarcosines, alkylsulfonic acids, alkyl-aryl sulfonic acids, isophthalic acid, alkyl phosphates, polyaspartic acid, imidazole and its derivatives, polyethylenimine with a mass average molar mass (Mw) in the range of from 200 to 2,000 g/mol, derivatives of triazoles, and derivatives of ethylene diamine.

11. A process for the manufacture of a semiconductor device from a semiconductor substrate, comprising removing residues and contaminants from the surface of the semiconductor substrate by contacting it at least once with a composition according to claim 1 .

12. The process according to claim 11 , further comprising chemical-mechanical-polishing (CMP).

Assignees

• Basf Se

Inventors

• Daeschlein Christian
• Siebert Max
• Lauter Michael
• Przybylski Piotr
• Proelss Julian
• Klipp Andreas
• Guevenc Haci Osman
• Leunissen Leonardos
• Baumann Roelf-Peter
• Wei Te Yu

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• C11D3/0026 Primary

  Low foaming or foam regulating compositions · CPC title

• C11D3/3753

  Polyvinylalcohol; Ethers or esters thereof · CPC title

• C11D3/3765

  in liquid compositions · CPC title