Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below

Patent metadata

Field	Value
Publication number	US-12518960-B2
Application number	US-202118004348-A
Country	US
Kind code	B2
Filing date	Jun 29, 2021
Priority date	Jul 9, 2020
Publication date	Jan 6, 2026
Grant date	Jan 6, 2026

Abstract

Described herein is a non-aqueous composition including
(a) an organic solvent;
and
(b) at least one additive of formulae I or II

where
R 1 is H R 2 is selected from the group consisting of H, C 1 to C 10 alkyl, C 1 to C 10 alkoxy, C 6 to C 10 aryl, and C 6 to C 10 aroxy, R 3 is selected from the group consisting of R 2 , R 4 is selected from the group consisting of C 1 to C 10 alkyl, C 1 to C 10 alkoxy, C 6 to C 10 aryl, and C 6 to C 10 aroxy, R 10 , R 12 are independently selected from the group consisting of C 1 to C 10 alkyl and C 1 to C 10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

First claim

The invention claimed is:

1 . A non-aqueous composition consisting essentially of
(a) an organic solvent selected from the group consisting of
(i) a linear, branched or cyclic C 5 to C 12 alkane, and
(ii) a benzene substituted by 1 to 3 C 1 to C 4 alkyl groups; and
(b) at least one additive of formulae I or II

wherein
R 1 is H
R 2 is selected from the group consisting of H, C 1 to C 10 alkyl, C 1 to C 10 alkoxy, C 6 to C 10 aryl, and C 6 to C 10 aroxy,
R 3 is selected from the group consisting of R 2 ,
R 4 is selected from the group consisting of C 1 to C 10 alkyl, C 1 to C 10 alkoxy, C 6 to C 10 aryl, and C 6 to C 10 aroxy,
R 10 , R 12 are independently selected from the group consisting of C 1 to C 10 alkyl and C 1 to C 10 alkoxy,
m is 1, 2 or 3, and
n is 0 or an integer from 1 to 100.

2 . The composition according to claim 1 , wherein the organic solvent is selected from the group consisting of hexane, heptane, octane, nonane, and decane.

3 . The composition according to claim 1 , wherein the organic solvent is selected from the group consisting of toluene, 1,2-xylene, 1,3-xylene, 1,4-xylene, ethylbenzene, 1,2-diethylbenzene, 1,3-diethylbenzene, and 1,4-diethylbenzene.

4 . The composition according to claim 1 , wherein a content of water in the non-aqueous composition is lower than 0.1% by weight.

5 . The composition according to claim 1 , wherein the at least one additive of formulae I or II is present in a concentration from 2.5 to 15% by weight.

6 . The composition according to claim 1 , wherein the at least one additive is a compound of formula I, wherein n is 0, 1 or 2.

7 . The composition according to claim 1 , wherein R 2 , R 4 , R 10 , and R 12 are independently selected from the group consisting of methyl, methoxy, ethyl, ethoxy, propyl, and propoxy.

8 . The composition according to claim 1 , wherein the at least one additive is selected from the group consisting of trimethoxysilane, triethoxysilane, trimethylsilane, and triethylsilane.

9 . A method of using the composition according to claim 1 , the method comprising using the composition for treating substrates having patterned material layers having line-space dimensions of 50 nm or below, aspect ratios of greater than or equal to 4, or a combination thereof.

10 . A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the method comprising
(a) providing a substrate having patterned material layers having line-space dimensions of less than or equal to 50 nm, aspect ratios of greater than or equal to 4, or a combination thereof; (b) contacting the substrate with an aqueous pretreatment composition comprising ammonia and hydrogen peroxide; (c) removing the aqueous pretreatment composition from the substrate; (d) contacting the substrate at least once with the non-aqueous composition according to claim 1 ; and (e) removing the non-aqueous composition from the contact with the substrate.

11 . The method according to claim 10 , wherein the patterned material layers have line-space dimensions of less than or equal to 32 nm and aspect ratios of greater than or equal to 10.

12 . The method according to claim 10 , wherein the patterned material layers comprise silicon, silicon oxide or silicon nitride.

13 . The method according to claim 10 , wherein in step (b), from 0.1 to 5% by weight ammonia (as NH 4 OH), and from 1 to 20% by weight hydrogen peroxide are used.

14 . The method according to claim 10 , wherein the patterned material layers are selected from the group consisting of patterned multi-stack material layers and patterned dielectric material layers.

15 . The composition according to claim 1 , wherein the at least one additive of formulae I or II is present in a concentration from 3.5 to 12% by weight.

16 . The composition according to claim 1 , wherein the at least one additive is a compound of formula I, wherein n is 0 or 1.

17 . The method according to claim 10 , wherein in step (b), from 0.5 to 3% by weight ammonia (as NH 4 OH), and from 1 to 20% by weight hydrogen peroxide are used.

18 . The method according to claim 10 , wherein in step (b), from 0.1 to 5% by weight ammonia (as NH 4 OH), and from 5 to 17% by weight hydrogen peroxide are used.

Assignees

• Basf Se

Inventors

• Kao Chi Yueh
• Shen Mei Chin
• Klipp Andreas
• Guevenc Haci Osman
• Loeffler Daniel

Classifications

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title

• C11D2111/22

  Electronic devices, e.g. PCBs or semiconductors · CPC title

• G03F7/40 Primary

  Treatment after imagewise removal, e.g. baking · CPC title

• C11D7/5027

  Hydrocarbons · CPC title

• C11D7/5022

  containing oxygen · CPC title