Composition for post chemical-mechanical-polishing cleaning

Patent metadata

Field	Value
Publication number	US-10865361-B2
Application number	US-201716307191-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	Jun 10, 2016
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R 1 and R 3 are independently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, R 2 is methyl and x and y are an integer, 1 (B)poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

First claim

The invention claimed is:

1. A post chemical-mechanical-polishing cleaning composition, comprising:
(A) a water-soluble nonionic copolymer which is a block copolymer of formula (I), an alternating copolymer of formula (II), or a random copolymer with units represented in formulas:

wherein R 1 and R 3 are independently hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, and x and y are each independently an integer, a ratio of x to y being in a range of from 0.11 to 9,
(B) poly(acrylic acid) or acrylic acid-maleic acid copolymer with a mass average molar mass of up to 10,000 g/mol, and
(C) water,
wherein a pH of the composition is in a range of from 7.0 to 10.5.

2. The composition of claim 1 , wherein the pH is in a range of from 8.0 to 9.0.

3. The composition of claim 1 , wherein the copolymer comprises a block copolymer having a mass average molar mass in a range of from 500 to 15,000 g/mol,
wherein
R 1 and R 3 are independently hydrogen or methyl,
R 2 is methyl, and
wherein the ratio of x to y is in a range of from 0.25 to 4.

4. The composition of claim 1 , wherein the poly(acrylic acid) or acrylic acid-maleic acid copolymer (B) is acrylic acid-maleic acid copolymer with a mass average molar mass of up to 10,000 g/mol.

5. The post chemical mechanical polishing cleaning composition of claim 1 , further comprising
(D) a corrosion inhibitor.

6. The composition of claim 5 , wherein the corrosion inhibitor (D) is at least one selected from the group consisting of acetylcysteine, an N-acyl-sarcosine, an alkylsulfonic acid, an alkyl-aryl sulfonic acid, isophthalic acid, an alkyl phosphate, polyaspartic acid, imidazole, an imidazole derivative, polyethylenimine with a mass average molar mass in a range of from 200 to 2,000 g/mol, a triazole derivative, and an ethylene diamine derivative.

7. The composition of claim 1 , further comprising
(E) a base.

8. The composition of claim 1 , wherein all constituents are in the liquid phase.

9. The composition of claim 1 , which is suitable for
a) removing residues and contaminants from a substrate, and/or
b) cleaning of semiconductor devices.

10. The composition of claim 1 , which is a ready-to-use post chemical-mechanical-polishing cleaning composition, comprising:
(A) a total amount of the water-soluble nonionic copolymer in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition; and
(B) a total amount of the poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition.

11. The composition of claim 1 , which is a post chemical-mechanical-polishing (post-CMP) cleaning composition concentrate, comprising:
(A) a total amount of the water-soluble nonionic copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition; and
(B) a total amount of the poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition.

12. A cobalt post chemical-mechanical-polishing cleaner, comprising:
the composition of claim 1 .

13. A process for the manufacture of a semiconductor device from a semiconductor substrate, the process comprising:
removing residues and contaminants from a surface of the semiconductor substrate by contacting it at least once with the composition of claim 1 .

14. The process of claim 13 , further comprising:
chemical-mechanical-polishing the semiconductor substrate.

15. A method, comprising:
cleaning a substrate comprising cobalt with the composition of claim 1 .

16. A method, comprising:
removing residues and contaminants from a surface of a semiconductor substrate comprising cobalt or a cobalt alloy with the composition of claim 1 .

17. The composition of claim 1 , comprising no quaternary ammonium cation.

18. The composition of claim 1 , having a sodium cation concentration of less than 500 ppm.

19. The composition of claim 1 , wherein the nonionic water soluble copolymer (A) has a mass average molar mass (Mw) in a range of from 2000 to 10000 g/mol.

20. The composition of claim 1 , comprising the acrylic acid-maleic acid copolymer,
wherein the nonionic water soluble copolymer (A) is a block copolymer with a central propyleneoxide block flanked by two polyethyleneglycol blocks.

Assignees

• Basf Se

Inventors

• Daeschlein Christian
• Siebert Max
• Lauter Michael
• Leunissen Leonardus
• Garcia Romero Ivan
• Guevenc Haci Osman
• Przybylski Peter
• Proelss Julian
• Klipp Andreas

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H05K3/26

  Cleaning or polishing of the conductive pattern · CPC title