Transistor assemblies with patterned back side-filled isolation regions
US-2025301779-A1 · Sep 25, 2025 · US
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Keys Patrick H patents
Keys Patrick H is listed as an inventor on 29 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Keys Patrick H |
| Total patents | 29 |
| First publication | Mar 28, 2017 |
| Latest publication | Sep 25, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Lateral gate material arrangements for quantum dot devices
US-12230687-B2 · Feb 18, 2025 · US
Vertically stacked finFETs and shared gate patterning
US-12100623-B2 · Sep 24, 2024 · US
Nanowire structures having wrap-around contacts
US-11757026-B2 · Sep 12, 2023 · US
Vertically stacked finfets & shared gate patterning
US-2022336284-A1 · Oct 20, 2022 · US
Vertically stacked finFETs and shared gate patterning
US-11404319-B2 · Aug 2, 2022 · US
Quantum dot devices with strain control
US-11183564-B2 · Nov 23, 2021 · US
Hexagonal arrays for quantum dot devices
US-11107891-B2 · Aug 31, 2021 · US
Methods and apparatus to remove epitaxial defects in semiconductors
US-10978590-B2 · Apr 13, 2021 · US
Nanowire structures having wrap-around contacts
US-2021036137-A1 · Feb 4, 2021 · US
Recent patents
Latest publications not already listed above.
Retrograde transistor doping by heterojunction materials
US-10896907-B2 · Jan 19, 2021 · US
Nanowire structures having wrap-around contacts
US-10840366-B2 · Nov 17, 2020 · US
Hexagonal arrays for quantum dot devices
US-2020321436-A1 · Oct 8, 2020 · US
Stacked channel structures for MOSFETs
US-10790281-B2 · Sep 29, 2020 · US
Vertically stacked finfets & shared gate patterning
US-2020235013-A1 · Jul 23, 2020 · US
Fin strain in quantum dot devices
US-10665770-B2 · May 26, 2020 · US
Deep EPI enabled by backside reveal for stress enhancement and contact
US-10636907-B2 · Apr 28, 2020 · US
Nanowire structures having wrap-around contacts
US-2020035818-A1 · Jan 30, 2020 · US
Nanowire structures having wrap-around contacts
US-10483385-B2 · Nov 19, 2019 · US
Retrograde transistor doping by heterojunction materials
US-2019237466-A1 · Aug 1, 2019 · US
Methods and apparatus to remove epitaxial defects in semiconductors
US-2019189795-A1 · Jun 20, 2019 · US
Fin strain in quantum dot devices
US-2019044050-A1 · Feb 7, 2019 · US
Quantum dot devices with strain control
US-2019043951-A1 · Feb 7, 2019 · US
Stacked channel structures for mosfets
US-2018323195-A1 · Nov 8, 2018 · US
Deep epi enabled by backside reveal for stress enhancement & contact
US-2018212057-A1 · Jul 26, 2018 · US
Semiconductor device with isolated body portion
US-10026829-B2 · Jul 17, 2018 · US
Carbon-based interface for epitaxially grown source/drain transistor regions
US-2018151733-A1 · May 31, 2018 · US
Semiconductor device with isolated body portion
US-2017162676-A1 · Jun 8, 2017 · US
Semiconductor device with isolated body portion
US-9608059-B2 · Mar 28, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 28 |
| Cea Stephen M | 2 |
| Keys Patrick H | 2 |
| Kim Seiyon | 2 |
| Google Llc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/62 | 19 |
| B82Y10/00 | 15 |
| H10D84/038 | 15 |
| H01L29/785 | 15 |
| H10D64/017 | 11 |