Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same
US-12473647-B2 · Nov 18, 2025 · US
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Jeon Sang Yong patents
Jeon Sang Yong is listed as an inventor on 16 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Jeon Sang Yong |
| Total patents | 16 |
| First publication | May 4, 2017 |
| Latest publication | Nov 18, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor
US-12398459-B2 · Aug 26, 2025 · US
Iodine-containing metal compound and composition for depositing thin film including the same
US-12384805-B2 · Aug 12, 2025 · US
Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same
US-12304924-B2 · May 20, 2025 · US
Iodine-containing metal compound and composition for depositing thin film including the same
US-2023250114-A1 · Aug 10, 2023 · US
Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same
US-2023203655-A1 · Jun 29, 2023 · US
Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
US-11459653-B2 · Oct 4, 2022 · US
Novel silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same
US-2022275010-A1 · Sep 1, 2022 · US
Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor
US-2022181578-A1 · Jun 9, 2022 · US
Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
US-2022018017-A1 · Jan 20, 2022 · US
Recent patents
Latest publications not already listed above.
Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same
US-10913755-B2 · Feb 9, 2021 · US
Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same
US-2019135840-A1 · May 9, 2019 · US
Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same
US-10134583-B2 · Nov 20, 2018 · US
Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition
US-9916974-B2 · Mar 13, 2018 · US
Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same
US-2017207083-A1 · Jul 20, 2017 · US
NOVEL AMINO-SILYL AMINE COMPOUND AND THE MANUFACTURING METHOD OF DIELECTRIC FILM CONTAINING Si-N BOND BY USING ATOMIC LAYER DEPOSITION
US-2017125243-A1 · May 4, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Dnf Co Ltd | 17 |
| Samsung Electronics Co Ltd | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C23C16/45553 | 12 |
| C23C16/401 | 8 |
| C23C16/45536 | 6 |
| C23C16/56 | 5 |
| C07F17/00 | 4 |