Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same

Patent metadata

Field	Value
Publication number	US-12304924-B2
Application number	US-202017753170-A
Country	US
Kind code	B2
Filing date	Aug 13, 2020
Priority date	Aug 22, 2019
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

First claim

The invention claimed is:

1. A silylcyclodisilazane compound represented by the following Formula 1:

wherein
R 1 to R 6 are each independently hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl or C 2 -C 7 alkenyl; and
R 7 is C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl or C 2 -C 7 alkenyl.

2. The silylcyclodisilazane compound of claim 1 , wherein
R 1 and R 3 are each independently C 1 -C 5 alkyl or C 2 -C 5 alkenyl;
R 2 is hydrogen, C 1 -C 5 alkyl or C 2 -C 5 alkenyl;
R 4 is C 1 -C 5 alkyl or C 2 -C 5 alkenyl;
R 5 and R 6 are each independently hydrogen, C 1 -C 5 alkyl or C 2 -C 5 alkenyl; and
R 7 is C 1 -C 5 alkyl or C 2 -C 5 alkenyl.

3. The silylcyclodisilazane compound of claim 1 , wherein the silylcyclodisilazane compound is selected from the following compounds:

4. A composition for depositing a silicon-containing thin film containing a silylcyclodisilazane compound represented by the following Formula 2:

wherein
R 11 to R 17 are each independently hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl or C 2 -C 7 alkenyl;
R 18 is hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl, C 2 -C 7 alkenyl or —SiR a R b R c ; and
R a , R b and R c are each independently hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl or C 2 -C 7 alkenyl;
provided that when R 11 to R 14 are all C 1 -C 7 alkyl, R 18 is not —SiR a R b R c .

5. The composition for depositing a silicon-containing thin film of claim 4 , wherein
R 11 and R 13 are each independently C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 12 and R 14 are each independently hydrogen, C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 15 is C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 16 and R 17 are each independently hydrogen, C 1 -C 7 alkyl or C 2 -C 7 alkenyl; and
R 18 is C 1 -C 7 alkyl or C 2 -C 7 alkenyl.

6. The composition for depositing a silicon-containing thin film of claim 4 , wherein
R 11 and R 13 are each independently C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 12 is hydrogen, C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 14 is hydrogen;
R 15 is C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 16 and R 17 are each independently hydrogen, C 1 -C 7 alkyl or C 2 -C 7 alkenyl;
R 18 is —SiR a R b R c ;
R a is C 1 -C 7 alkyl or C 2 -C 7 alkenyl; and
R b and R c are each independently hydrogen, C 1 -C 7 alkyl or C 2 -C 7 alkenyl.

7. The composition for depositing a silicon-containing thin film of claim 4 , wherein the silylcyclodisilazane compound is selected from the following compounds:

8. A method for manufacturing a silicon-containing thin film using the composition for depositing a silicon-containing thin film of claim 4 .

9. The method for manufacturing a silicon-containing thin film of claim 8 , wherein the method is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

10. The method for manufacturing a silicon-containing thin film of claim 8 , wherein the silicon-containing thin film is a silicon oxide (SiO 2 ) film, a silicon oxycarbide (SiOC) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, a silicon carbonitride (SiCN) film, or a silicon carbide (SiC) film.

11. The method for manufacturing a silicon-containing thin film of claim 8 , the method comprising:
a) heating and maintaining a temperature of a substrate mounted in a chamber to 30 to 400° C.;
b) contacting the substrate with a composition for depositing a silicon-containing thin film on the substrate; and
c) injecting reaction gas to deposit a silicon-containing thin film on the substrate.

12. A method for manufacturing a silicon-containing thin film using a silylcyclodisilazane compound represented by the following Formula 2:

wherein
R 11 to R 17 are each independently hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl or C 2 -C 7 alkenyl;
R 18 is hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl, C 2 -C 7 alkenyl or —SiR a R b R c ; and
R a , R b and R c are each independently hydrogen, C 1 -C 7 alkyl, C 3 -C 7 cycloalkyl or C 2 -C 7 alkenyl;
provided that when R 11 to R 14 are all C 1 -C 7 alkyl, R 18 is not —SiR a R b R c .

13. The method for manufacturing a silicon-containing thin film of claim 12 , wherein the method is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

14. The method for manufacturing a silicon-containing thin film of claim 12 , wherein the silicon-containing thin film is a silicon oxide (SiO 2 ) film, a silicon oxycarbide (SiOC) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, a silicon carbonitride (SiCN) film, or a silicon carbide (SiC) film.

Assignees

• Dnf Co Ltd

Inventors

• Jang Se Jin
• Kim Sung Gi
• Park Jeong Joo
• Byun Tae Seok
• Kwone Yong Hee
• Kim Yeong Hun
• Lim Haengdon
• Jeon Sang Yong
• Lee Sang Ick

Classifications

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C16/401

  containing silicon · CPC title

• C23C16/345

  Silicon nitride · CPC title

• C23C16/402

  Silicon dioxide · CPC title