Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Patent metadata

Field	Value
Publication number	US-11459653-B2
Application number	US-201917294377-A
Country	US
Kind code	B2
Filing date	Nov 13, 2019
Priority date	Nov 14, 2018
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

First claim

The invention claimed is:

1. A method of manufacturing a molybdenum-containing thin film, the method comprising:
using a molybdenum(0)-based hydrocarbon compound as a precursor for depositing a thin film, wherein the molybdenum (0)-based hydrocarbon compound is represented by the following Formula 1, 2, or 3:

wherein R 1 to R 6 are each independently hydrogen or C1-C7alkyl,

wherein R 1 and R 2 are each independently hydrogen or C1-C7alkyl, and
using iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof as a reaction gas to manufacture the molybdenum-containing thin film.

2. The method of claim 1 , wherein the method is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

3. The method of claim 1 , wherein the method includes:
a) maintaining a temperature of a substrate mounted in a chamber at 80 to 500° C.;
b) injecting a carrier gas and the molybdenum(0)-based hydrocarbon compound; and
c) injecting a reaction gas which is iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof to manufacture the molybdenum-containing thin film on the substrate.

4. The method of claim 3 , further comprising, after c), performing heat treatment.

5. The method of claim 4 , wherein the heat treatment is performed at 200 to 700° C.

6. The method of claim 3 , wherein the carrier gas is any one or two or more selected from a group consisting of nitrogen, hydrogen, argon, and helium.

7. The method of claim 1 , wherein the reaction gas is used at 0.1 to 200 mol, based on 1 mol of the molybdenum(0)-based hydrocarbon compound.

8. The method of claim 1 , wherein the reaction gas is I 2 , CH 3 I, CH 2 I 2 , CHI 3 , CH 3 CH 2 I, CH 3 CHI 2 , ICH 2 CH 2 I, CH 3 CH 2 CH 2 I, CH 3 CHICH 3 , ICH 2 CH 2 CH 2 I, or SiH 2 I 2 .

9. A composition for depositing a molybdenum-containing thin film, the composition comprising:
a molybdenum(0)-based hydrocarbon compound as a precursor represented by the following Formula 1, 2, or 3,

wherein R 1 to R 6 are each independently hydrogen or C1-C7alkyl,

wherein R 1 and R 2 are each independently hydrogen or C1-C7alkyl; and
iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof as reaction gas.

10. The composition of claim 9 , wherein the reaction gas is used at 0.1 to 200 mol, based on 1 mol of the molybdenum(0)-based hydrocarbon compound.

11. The composition of claim 9 , wherein the reaction gas is I 2 , CH 3 I, CH 2 I 2 , CHI 3 , CH 3 CH 2 I, CH 3 CHI 2 , ICH 2 CH 2 I, CH 3 CH 2 CH 2 I, CH 3 CHICH 3 , ICH 2 CH 2 CH 2 I, or SiH 2 I 2 .

12. A molybdenum-containing thin film, manufactured using the composition for depositing a molybdenum-containing thin film of claim 9 , having a specific resistance of 200 μΩ·cm or less and having an oxygen content of 10% or less.

13. The molybdenum-containing thin film of claim 12 , wherein the molybdenum-containing thin film has a carbon content of 30% or less.

Assignees

• Dnf Co Ltd

Inventors

• Kim Myong Woon
• Lee Sang Ick
• Seo Jang Woo
• Jeon Sang Yong
• Lim Haeng Don

Classifications

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F11/00

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title

• C23C16/56

  After-treatment · CPC title