Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

Patent metadata

Field	Value
Publication number	US-10913755-B2
Application number	US-201716093012-A
Country	US
Kind code	B2
Filing date	Apr 6, 2017
Priority date	Apr 12, 2016
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.

First claim

The invention claimed is:

1. A transition metal compound of Chemical Formula 1 below:

in Chemical Formula 1,
M is titanium, zirconium, or hafnium;
R 1 to R 4 are each independently a hydrogen atom or a (C1-C7)alkyl group;
R 5 and R 6 are each independently a hydrogen atom or a (C1-C20)alkyl group;
A is —(CR 11 R 12 ) a —, R 11 and R 12 are each independently hydrogen or a (C1-C20)alkyl group, and a is an integer of 1 to 3;
D is —N(R 13 )—, and R 13 is a hydrogen atom or a (C1-C20)alkyl group;
X is each independently a di (C1-C20)alkylamino group or N—(C3-C20)heterocycloalkyl group; and
n is an integer of 2.

2. The transition metal compound of claim 1 , wherein the transition metal compound is selected from the following compounds:

3. A method for preparing a transition metal compound of Chemical Formula 1 below comprising reacting Chemical Formula 2 below with Chemical Formula 3 below:

in Chemical Formulas 1 to 3,
M is titanium, zirconium, or hafnium;
R 1 to R 4 are each independently a hydrogen atom or a (C1-C7)alkyl group;
R 5 and R 6 are each independently a hydrogen atom or a (C1-C20)alkyl group;
A is —(CR 11 R 12 ) a —, R 11 and R 12 are each independently hydrogen or a (C1-C20)alkyl group, and a is an integer of 1 to 3;
D is —N(R 13 )—, and R 13 is a hydrogen atom or a (C1-C20)alkyl group;
X is each independently a di (C1-C20)alkylamino group or N—(C3-C20)heterocycloalkyl group; and
n is an integer of 2.

4. The method for preparing a transition metal compound of claim 3 , comprising reacting Chemical Formula 4 below with Chemical Formula 5 below to prepare Chemical Formula 6 below, and then reacting the Chemical Formula 6 with Chemical Formula 7 below to provide Chemical Formula 2:

in Chemical Formulas 4 to 7,
M 1 is an alkali metal;
R 1 to R 4 are each independently a hydrogen atom or a (C1-C20)alkyl group;
R 5 and R 6 are each independently a hydrogen atom or a (C1-C20)alkyl group;
A is —(CR 11 R 12 ) a —, R 11 and R 12 are each independently hydrogen or a (C1-C20)alkyl group, and a is an integer of 1 to 3;
D is —N(R 13 )—, and R 13 is a hydrogen atom or a (C1-C20)alkyl group;
X 1 and X 2 are each independently halogen; and
n is an integer of 2.

5. A composition for depositing a transition metal silicate thin film comprising: the transition metal compound of Chemical Formula 1 below:

in Chemical Formula 1,
M is titanium, zirconium, or hafnium;
R 1 to R 4 are each independently a hydrogen atom or a (C1-C20)alkyl group;
R 5 and R 6 are each independently a hydrogen atom or a (C1-C20)alkyl group;
A is —(CR 11 R 12 ) a —, R 11 and R 12 are each independently hydrogen or a (C1-C20)alkyl group, and a is an integer of 1 to 3;
D is —N(R 13 )—, and R 13 is a hydrogen atom or a (C1-C20)alkyl group;
X is each independently a di (C1-C20)alkylamino group or N—(C3-C20)heterocycloalkyl group; and
n is an integer of 2.

6. The composition for depositing a transition metal silicate thin film of claim 5 , wherein a transition metal of the transition metal compound is zirconium, hafnium or titanium.

7. A preparation method of a transition metal silicate thin film comprising adding the composition of claim 5 to a substrate.

Assignees

• Dnf Co Ltd

Inventors

• Kim Myong Woon
• Lee Sang Ick
• Chae Won Mook
• Yim Sang Jun
• Lee Kang Yong
• Cho A Ra
• Jeon Sang Yong
• Lim Haeng Don

Classifications

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/401

  containing silicon · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/408

  of copper or solid solutions thereof · CPC title