Atomic layer deposition of antimony oxide films
US-2017140918-A1 · May 18, 2017 · US
Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same
US12473647B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12473647-B2 |
| Application number | US-202218146894-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2022 |
| Priority date | Dec 28, 2021 |
| Publication date | Nov 18, 2025 |
| Grant date | Nov 18, 2025 |
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Abstract
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Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.
First claim
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The invention claimed is: 1 . A composition for depositing an antimony-containing thin film comprising: an antimony compound represented by the following Chemical Formula 1: wherein R 1 to R 4 are independently of one another linear or branched (C1-C7) alkyl; and R 5 is branched (C3-C7) alkyl. 2 . The composition for depositing an antimony-containing thin film of claim 1 , wherein in Chemical Formula 1, R 1 to R 4 are independently of one another linear (C1-C7) alkyl. 3 . The composition for depositing an antimony-containing thin film of claim 1 , wherein R 5 is branched (C3-C5) alkyl. 4 . The composition for depositing an antimony-containing thin film of claim 1 , wherein the antimony compound is selected from the following compounds: 5 . A method for manufacturing an antimony-containing thin film, comprising reacting a reaction gas with an antimony compound represented by the following Chemical Formula 1: wherein R 1 to R 5 are independently of one another linear or branched (C1-C7) alkyl. 6 . The method for manufacturing an antimony-containing thin film of claim 5 , wherein in Chemical Formula 1, R 1 to R 4 are independently of one another linear (C1-C7) alkyl, and R 5 is branched (C3-C7) alkyl. 7 . The method for manufacturing an antimony-containing thin film of claim 5 , wherein the antimony compound represented by Chemical Formula 1 is represented by the following Chemical Formula 2: wherein R 11 and R 12 are independently of each other linear or branched (C1-C7) alkyl; and R 5 is branched (C3-C7) alkyl. 8 . The method for manufacturing an antimony-containing thin film of claim 7 , wherein R 5 is branched (C3-C5) alkyl. 9 . The method for manufacturing an antimony-containing thin film of claim 5 , wherein the antimony compound is selected from the following compounds: 10 . The method for manufacturing an antimony-containing thin film of claim 5 , wherein the method includes: a) maintaining a temperature of a substrate mounted in a chamber at 30 to 500° C.; b) bringing the substrate into contact with the composition for depositing an antimony-containing thin film of claim 1 to adsorb the composition onto the substrate; and c) injecting a reaction gas into the substrate onto which the composition for depositing an antimony-containing thin film is adsorbed to form an antimony-containing thin film. 11 . The method for manufacturing an antimony-containing thin film of claim 10 , wherein the reaction gas includes oxygen (O 2 ), ozone (O 3 ), oxygen plasma, hydrogen (H 2 ), hydrogen plasma, water (H 2 O), hydrogen peroxide (H 2 O 2 ), nitrogen dioxide (NO 2 ), nitrogen monoxide (NO), nitrous oxide (N 2 O), ammonia (NH 3 ), carbon dioxide (CO 2 ), formic acid (HCOOH), acetic acid (CH 3 COOH), anhydrous acetic acid ((CH 3 CO 2 O), or a combination thereof. 12 . The method for manufacturing an antimony-containing thin film of claim 10 , wherein the reaction gas is supplied after being activated by generating plasma at 50 to 1,000 W. 13 . An antimony compound represented by the following Chemical Formula 1: wherein R 1 to R 4 are independently of one another linear or branched (C1-C7) alkyl; and R 5 is branched (C3-C7) alkyl. 14 . The antimony compound of claim 13 , wherein R 5 is branched (C3-C5) alkyl.
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Classifications
Antimony compounds · CPC title
Plasma being used continuously during the ALD cycle · CPC title
Oxides · CPC title
Plasma being used non-continuously during the ALD reactions · CPC title
Vacuum evaporation · CPC title
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- What does patent US12473647B2 cover?
- Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.
- Who is the assignee on this patent?
- Dnf Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C23C16/45553. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 18 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).