Source or drain structures with vertical trenches having contacts therein
US-2026096139-A1 · Apr 2, 2026 · US
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Choi Chi-Hing patents
Choi Chi-Hing is listed as an inventor on 25 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Choi Chi-Hing |
| Total patents | 25 |
| First publication | Mar 31, 2022 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Arsenic-doped source/drain with phosphorus-doped contact region for dopant diffusion control
US-2026096162-A1 · Apr 2, 2026 · US
Conformal approaches for fabricating contacts and the resulting structures
US-2026096181-A1 · Apr 2, 2026 · US
Dual contact process with selective deposition
US-12593486-B2 · Mar 31, 2026 · US
Contact over active gate structures with trench contact layers for advanced integrated circuit structure fabrication
US-12568644-B2 · Mar 3, 2026 · US
SiGe:GAB source or drain structures with low resistivity
US-12520573-B2 · Jan 6, 2026 · US
Mitigating proximity effects of deep trench vias
US-2025324697-A1 · Oct 16, 2025 · US
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
US-12439669-B2 · Oct 7, 2025 · US
Integrated circuit structures having epitaxial nubs for uniform grid metal gate and trench contact cut
US-2025311331-A1 · Oct 2, 2025 · US
Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability
US-12426342-B2 · Sep 23, 2025 · US
Recent patents
Latest publications not already listed above.
Uniaxial dual strain in ribbonized channel
US-2025194223-A1 · Jun 12, 2025 · US
Mitigating proximity effects of deep trench vias
US-2025098249-A1 · Mar 20, 2025 · US
Low-resistance via structures
US-2025006592-A1 · Jan 2, 2025 · US
Integrated circuit structures with differential epitaxial source or drain dent
US-2025006733-A1 · Jan 2, 2025 · US
Integrated circuit devices with contacts using nitridized molybdenum
US-2024105508-A1 · Mar 28, 2024 · US
Capping source and drain regions of transistors to prevent diffusion of dopants during fabrication
US-2024006488-A1 · Jan 4, 2024 · US
Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layers
US-2024006506-A1 · Jan 4, 2024 · US
Source and drain refractory metal cap
US-2024006494-A1 · Jan 4, 2024 · US
Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers
US-2024006533-A1 · Jan 4, 2024 · US
Sige:gab source or drain structures with low resistivity
US-2023420456-A1 · Dec 28, 2023 · US
Source or drain structures with selective silicide contacts thereon
US-2023317789-A1 · Oct 5, 2023 · US
Silicon rich capping layer pre-amorphized with germanium and boron implants for thermal stability and low pmos contact resistivity
US-2023101725-A1 · Mar 30, 2023 · US
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
US-2022416032-A1 · Dec 29, 2022 · US
Low germanium, high boron silicon rich capping layer for pmos contact resistance thermal stability
US-2022416050-A1 · Dec 29, 2022 · US
Dual contact process with selective deposition
US-2022102506-A1 · Mar 31, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 25 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6735 | 20 |
| H10D30/6757 | 19 |
| H10D62/121 | 17 |
| H10D30/43 | 16 |
| H10D64/62 | 15 |