Selective Dual Silicide Formation Using A Maskless Fabrication Process Flow
US-2021257262-A1 · Aug 19, 2021 · US
Contact over active gate structures with trench contact layers for advanced integrated circuit structure fabrication
US12568644B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12568644-B2 |
| Application number | US-202117556627-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2021 |
| Priority date | Dec 20, 2021 |
| Publication date | Mar 3, 2026 |
| Grant date | Mar 3, 2026 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Contact over active gate (COAG) structures with trench contact layers, and methods of fabricating contact over active gate (COAG) structures using trench contact layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is adjacent to the gate structure. A conductive trench contact structure is on the epitaxial source or drain structure. The conductive trench contact structure includes a first planar layer on the epitaxial source or drain structure, a second planar layer on the first planar layer, and a conductive fill material on the second planar layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . An integrated circuit structure, comprising: a gate structure; an epitaxial source or drain structure adjacent to the gate structure; and a conductive trench contact structure on the epitaxial source or drain structure, wherein the conductive trench contact structure comprises a first planar layer on the epitaxial source or drain structure, a second planar layer on the first planar layer, and a conductive fill material on the second planar layer, wherein the second planar layer includes a metal not included in the first planar layer. 2 . The integrated circuit structure of claim 1 , wherein the first planar layer is a workfunction layer, and the second planar layer is a capping layer. 3 . The integrated circuit structure of claim 1 , wherein the first planar layer comprises titanium, the second planar layer comprises molybdenum, and the conductive fill material comprises cobalt. 4 . The integrated circuit structure of claim 1 , wherein the first planar layer comprises titanium, the second planar layer comprises tungsten, and the conductive fill material comprises cobalt. 5 . The integrated circuit structure of claim 1 , wherein the gate structure has a gate insulating layer thereon, and the conductive trench contact structure has a trench insulating layer thereon. 6 . An integrated circuit structure, comprising: a gate structure; an epitaxial source or drain structure adjacent to the gate structure; and a conductive trench contact structure on the epitaxial source or drain structure, wherein the conductive trench contact structure comprises an epitaxial semiconductor layer on the epitaxial source or drain structure, a first planar layer on the epitaxial semiconductor layer, a second planar layer on the planar layer, and a conductive fill material above the second planar layer, wherein the second planar layer includes a metal not included in the first planar layer. 7 . The integrated circuit structure of claim 6 , wherein the planar layer is a workfunction layer. 8 . The integrated circuit structure of claim 6 , wherein the planar layer comprises tungsten or molybdenum, and the conductive fill material comprises cobalt. 9 . The integrated circuit structure of claim 6 , wherein the planar layer comprises titanium, and the conductive fill material comprises cobalt. 10 . The integrated circuit structure of claim 6 , wherein the gate structure has a gate insulating layer thereon, and the conductive trench contact structure has a trench insulating layer thereon.
Assignees
Inventors
Classifications
Electrodes ohmically coupled to a semiconductor · CPC title
the principal metal being a transition metal · CPC title
by forming self-aligned vias or self-aligned contact plugs · CPC title
in openings in dielectrics · CPC title
the conductive layers comprising transition metals · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US12568644B2 cover?
- Contact over active gate (COAG) structures with trench contact layers, and methods of fabricating contact over active gate (COAG) structures using trench contact layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is adjacent to the gate structure. A conductive trench contact structure is on the epitaxial source…
- Who is the assignee on this patent?
- Intel Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6219. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).