Semiconductor devices having vertical channel transistor structures and methods of fabricating the same
US-2026047132-A1 · Feb 12, 2026 · US
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Cho Minhee patents
Cho Minhee is listed as an inventor on 53 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Cho Minhee |
| Total patents | 53 |
| First publication | Jun 9, 2015 |
| Latest publication | Feb 12, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor memory device and method of manufacturing the same
US-12532449-B2 · Jan 20, 2026 · US
Semiconductor devices
US-12527027-B2 · Jan 13, 2026 · US
Semiconductor devices having vertical channel transistor structures and methods of fabricating the same
US-12464770-B2 · Nov 4, 2025 · US
Semiconductor memory device
US-12408324-B2 · Sep 2, 2025 · US
Protection diode and semiconductor device having the same
US-2025255008-A1 · Aug 7, 2025 · US
Transistor structure including oxide semiconductor pattern surrounding bottom and sidewall of gate and semiconductor device using the same
US-12342530-B2 · Jun 24, 2025 · US
Semiconductor device
US-2025063727-A1 · Feb 20, 2025 · US
Semiconductor device
US-12166132-B2 · Dec 10, 2024 · US
Semiconductor device
US-2024324177-A1 · Sep 26, 2024 · US
Recent patents
Latest publications not already listed above.
Intergrated circuit devices
US-2024322048-A1 · Sep 26, 2024 · US
Semiconductor memory devices
US-2024276703-A1 · Aug 15, 2024 · US
Semiconductor device including active pattern
US-2024250169-A1 · Jul 25, 2024 · US
Apparatus for treating a substrate and method for improving cooling efficiency thereof
US-2024231246-A9 · Jul 11, 2024 · US
Semiconductor memory device
US-2024224494-A1 · Jul 4, 2024 · US
Semiconductor device
US-2024170578-A1 · May 23, 2024 · US
Apparatus for treating a substrate and method for improving cooling efficiency thereof
US-2024134292-A1 · Apr 25, 2024 · US
Memory device having volatile and non-volatile memory cells
US-11922984-B2 · Mar 5, 2024 · US
Semiconductor devices
US-2024074157-A1 · Feb 29, 2024 · US
Semiconductor memory device
US-11917805-B2 · Feb 27, 2024 · US
Semiconductor devices
US-2024030342-A1 · Jan 25, 2024 · US
Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material
US-11862476-B2 · Jan 2, 2024 · US
Semiconductor memory device
US-2023292490-A1 · Sep 14, 2023 · US
Transistor structure and semiconductor device using the same
US-2023269933-A1 · Aug 24, 2023 · US
Memory device having a channel provided on a memory unit
US-11647625-B2 · May 9, 2023 · US
Memory device
US-2023021071-A1 · Jan 19, 2023 · US
Semiconductor device
US-2023009575-A1 · Jan 12, 2023 · US
Semiconductor devices having vertical channel transistor structures and methods of fabricating the same
US-2022384661-A1 · Dec 1, 2022 · US
Semiconductor device
US-11508851-B2 · Nov 22, 2022 · US
Memory device
US-11482267-B2 · Oct 25, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 47 |
| Semes Co Ltd | 6 |
| Korea Industry Univ Cooperation Foundation Hanyang Univ | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10B12/05 | 22 |
| H10B12/315 | 20 |
| H10B12/488 | 19 |
| H10B12/482 | 18 |
| H10D30/6755 | 17 |