Liner-free resistance contacts and silicide with silicide stop layer
US-12040373-B2 · Jul 16, 2024 · US
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Carr Adra patents
Carr Adra is listed as an inventor on 30 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Carr Adra |
| Total patents | 30 |
| First publication | Apr 30, 2019 |
| Latest publication | Jul 16, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Contact resistance reduction in nanosheet device structure
US-11894423-B2 · Feb 6, 2024 · US
Phase change memory cell galvanic corrosion prevention
US-11800817-B2 · Oct 24, 2023 · US
Liner-free resistance contacts and silicide with silicide stop layer
US-2023187521-A1 · Jun 15, 2023 · US
Phase change memory cell galvanic corrosion prevention
US-2022407005-A1 · Dec 22, 2022 · US
Contact resistance reduction in nanosheet device structure
US-2022181439-A1 · Jun 9, 2022 · US
Contact resistance reduction in nanosheet device structure
US-11289573-B2 · Mar 29, 2022 · US
Self-aligned contacts for MOL
US-11205590-B2 · Dec 21, 2021 · US
Contact interlayer dielectric replacement with improved SAC cap retention
US-11024536-B2 · Jun 1, 2021 · US
Spacer-confined epitaxial growth
US-10978573-B2 · Apr 13, 2021 · US
Recent patents
Latest publications not already listed above.
Self-Aligned Contacts for MOL
US-2021090950-A1 · Mar 25, 2021 · US
Formation of wrap-around-contact to reduce contact resistivity
US-10896965-B2 · Jan 19, 2021 · US
Spacer-confined epitaxial growth
US-2021013321-A1 · Jan 14, 2021 · US
Formation of wrap-around-contact to reduce contact resistivity
US-10886376-B2 · Jan 5, 2021 · US
Contact interlayer dielectric replacement with improved sac cap retention
US-2020335392-A1 · Oct 22, 2020 · US
Interlayer dielectric replacement techniques with protection for source/drain contacts
US-10770562-B1 · Sep 8, 2020 · US
Contact resistance reduction in nanosheet device structure
US-2020279918-A1 · Sep 3, 2020 · US
ReRAM structure formed by a single process
US-10734575-B2 · Aug 4, 2020 · US
Formation of wrap-around-contact to reduce contact resistivity
US-2020098928-A1 · Mar 26, 2020 · US
Formation of wrap-around-contact to reduce contact resistivity
US-2020098927-A1 · Mar 26, 2020 · US
Formation of wrap-around-contact to reduce contact resistivity
US-10586872-B2 · Mar 10, 2020 · US
Formation of wrap-around-contact to reduce contact resistivity
US-2020013900-A1 · Jan 9, 2020 · US
ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
US-2020006648-A1 · Jan 2, 2020 · US
ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
US-2020006647-A1 · Jan 2, 2020 · US
ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
US-2019341546-A1 · Nov 7, 2019 · US
ReRAM structure formed by a single process
US-10446746-B1 · Oct 15, 2019 · US
Patterning material film stack comprising hard mask layer having high metal content interface to resist layer
US-10395925-B2 · Aug 27, 2019 · US
Wrap around contact using sacrificial mandrel
US-10367077-B1 · Jul 30, 2019 · US
Patterning material film stack comprising hard mask layer having high metal content interface to resist layer
US-2019206681-A1 · Jul 4, 2019 · US
Wrap-around contacts formed with multiple silicide layers
US-10276442-B1 · Apr 30, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 29 |
| Globalfoundries Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D64/017 | 16 |
| H10D62/121 | 16 |
| H10W20/069 | 15 |
| H10D30/6757 | 14 |
| H10D30/6735 | 14 |