Silicon carbide device with a stripe-shaped trench gate structure
US-2025203986-A1 · Jun 19, 2025 · US
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Basler Thomas patents
Basler Thomas is listed as an inventor on 90 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Basler Thomas |
| Total patents | 90 |
| First publication | Apr 21, 2016 |
| Latest publication | Jun 19, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Silicon carbide device with a stripe-shaped trench gate structure
US-12266694-B2 · Apr 1, 2025 · US
Silicon carbide device with a stripe-shaped trench gate structure
US-2024136406-A1 · Apr 25, 2024 · US
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
US-2024113026-A1 · Apr 4, 2024 · US
Semiconductor device including trench structure and manufacturing method
US-11929397-B2 · Mar 12, 2024 · US
Method of producing a silicon carbide device with a trench gate
US-11888032-B2 · Jan 30, 2024 · US
Semiconductor Package or a Printed Circuit Board, Both Modified to One or More of Reduce, Inverse or Utilize Magnetic Coupling Caused by the Load Current of a Semiconductor Transistor
US-2024014104-A1 · Jan 11, 2024 · US
Power semiconductor device having overvoltage protection and method of manufacturing the same
US-11843045-B2 · Dec 12, 2023 · US
Semiconductor component having a diode structure in a SiC semiconductor body
US-11742391-B2 · Aug 29, 2023 · US
Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region
US-11721689-B2 · Aug 8, 2023 · US
Recent patents
Latest publications not already listed above.
Electronic devices including electrically insulated load electrodes
US-11646258-B2 · May 9, 2023 · US
Silicon carbide field-effect transistor including shielding areas
US-11626477-B2 · Apr 11, 2023 · US
Method of producing a silicon carbide device with a trench gate
US-2023094032-A1 · Mar 30, 2023 · US
Semiconductor device with insulated gate transistor cell and rectifying junction
US-11588048-B2 · Feb 21, 2023 · US
RC snubber
US-11563322-B2 · Jan 24, 2023 · US
Silicon carbide device with trench gate
US-11552173-B2 · Jan 10, 2023 · US
Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region
US-2022367443-A1 · Nov 17, 2022 · US
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
US-2022285283-A1 · Sep 8, 2022 · US
Silicon carbide semiconductor component
US-11437470-B2 · Sep 6, 2022 · US
Semiconductor device having overload current carrying capability
US-11410989-B2 · Aug 9, 2022 · US
Failure structure in semiconductor device
US-11404370-B2 · Aug 2, 2022 · US
Semiconductor device with surge current protection
US-11394194-B2 · Jul 19, 2022 · US
Silicon carbide device and method for forming a silicon carbide device
US-11367683-B2 · Jun 21, 2022 · US
Semiconductor Device Including Trench Structure and Manufacturing Method
US-2022149156-A1 · May 12, 2022 · US
Rc snubber
US-2022085601-A1 · Mar 17, 2022 · US
Semiconductor device including trench structure and manufacturing method
US-11276754-B2 · Mar 15, 2022 · US
Silicon carbide devices and methods for forming silicon carbide devices
US-11264464-B2 · Mar 1, 2022 · US
Silicon Carbide Semiconductor Component
US-2021343835-A1 · Nov 4, 2021 · US
Semiconductor device with insulated gate transistor cell and rectifying junction
US-2021273088-A1 · Sep 2, 2021 · US
Silicon carbide field-effect transistor including shielding areas
US-11101343-B2 · Aug 24, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Ag | 61 |
| Infineon Technologies Austria Ag | 27 |
| Infineon Technologies Austria | 2 |
| Infineon Technologies Ag | 1 |
| Infineon Techonologies Ag | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8325 | 53 |
| H10D62/106 | 47 |
| H10D62/393 | 45 |
| H10D12/481 | 45 |
| H01L29/1608 | 45 |