Optoelectronic device and manufacturing method
US-2023268460-A1 · Aug 24, 2023 · US
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Amstatt Benoit patents
Amstatt Benoit is listed as an inventor on 16 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Amstatt Benoit |
| Total patents | 16 |
| First publication | Oct 1, 2015 |
| Latest publication | Aug 24, 2023 |
Notable patents
Publications ranked by popularity score, then publication date.
Optoelectronic device comprising three-dimensional diodes
US-10886427-B2 · Jan 5, 2021 · US
Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
US-10801129-B2 · Oct 13, 2020 · US
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
US-10636653-B2 · Apr 28, 2020 · US
Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide
US-10340138-B2 · Jul 2, 2019 · US
Optoelectronic device comprising three-dimensional diodes
US-2019172970-A1 · Jun 6, 2019 · US
Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
US-2019153619-A1 · May 23, 2019 · US
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US-9991342-B2 · Jun 5, 2018 · US
Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide
US-2017345652-A1 · Nov 30, 2017 · US
Optoelectronic device and method for manufacturing same
US-9728679-B2 · Aug 8, 2017 · US
Recent patents
Latest publications not already listed above.
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
US-9698011-B2 · Jul 4, 2017 · US
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US-9679966-B2 · Jun 13, 2017 · US
Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure
US-9559256-B2 · Jan 31, 2017 · US
Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure
US-2016141451-A1 · May 19, 2016 · US
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US-2015295041-A1 · Oct 15, 2015 · US
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
US-2015279672-A1 · Oct 1, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Commissariat Energie Atomique | 14 |
| Aledia | 12 |
| Commissariat L Energie Atomique Et Aux Energies Alternatives | 1 |
| Commissariat Á L'Energie Atomique Et Aux Energies Alternatives | 1 |
| Commissariat A L'Energie Atomique Et Aux Energies | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P14/3462 | 13 |
| H10P14/3416 | 13 |
| H10H20/01335 | 13 |
| H01L21/02603 | 12 |
| H01L33/007 | 12 |