Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure

Patent metadata

Field	Value
Publication number	US-9559256-B2
Application number	US-201414898684-A
Country	US
Kind code	B2
Filing date	Jun 19, 2014
Priority date	Jun 21, 2013
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium.

First claim

The invention claimed is:

1. A method for manufacturing at least one semiconductor structure comprising:
providing a substrate comprising at least one semiconductor silicon surface;
forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface;
forming the at least one semiconductor structure in contact with the amorphous silicon carbide layer, the at least one semiconductor structure comprising at least a first part in contact with the surface of the amorphous silicon carbide layer, the first part comprises gallium,
wherein the at least one semiconductor structure comprises a semiconductor wire.

2. The manufacturing method according to claim 1 , wherein a thickness of the amorphous silicon carbide layer is lower than 10 nm.

3. The manufacturing method according to claim 1 , wherein a thickness of the amorphous silicon carbide layer is lower than 5 nm.

4. The manufacturing method according to claim 1 , wherein the forming the amorphous silicon carbide layer comprises chemical deposition of silicon carbide on the semiconductor silicon surface or a plasma enhanced chemical vapor deposition.

5. The manufacturing method according to claim 1 , wherein the first part is of gallium nitride.

6. The manufacturing method according to claim 1 , wherein the forming the amorphous silicon carbide layer comprises:
depositing a thick amorphous silicon carbide layer on at least one part of the semiconductor silicon surface;
removing a part of the thickness of the thick amorphous silicon carbide layer to form the amorphous silicon carbide layer.

7. The manufacturing method according to claim 1 , wherein the forming the at least one semiconductor structure comprises:
forming a mask in contact with the surface of the amorphous silicon carbide layer, the mask leaving free at least one surface portion of the amorphous silicon carbide layer as a formation portion;
growing the at least one semiconductor structure in contact with the formation portion.

8. The manufacturing method according to claim 1 , wherein a contact part of the at least one semiconductor structure is formed of a first material comprising gallium, the forming the at least one semiconductor structure comprising forming a layer with the first material.

9. A semiconductor component comprising:
a substrate comprising at least one semiconductor silicon surface;
an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface;
at least one semiconductor structure in contact with the amorphous silicon carbide layer, the part of the at least one semiconductor structure in contact with the amorphous silicon carbide layer comprising gallium,
wherein the at least one semiconductor structure comprises a semiconductor wire.

10. The semiconductor component according to claim 9 , wherein the amorphous silicon carbide layer has a thickness lower than 10 nm.

11. The semiconductor component according to claim 9 , wherein a layer of a first material comprising gallium is further provided, the at least one semiconductor structure comprising a part of the layer by which it is in contact with the silicon carbide layer.

12. The semiconductor component according to claim 9 , wherein the at least one semiconductor structure comprises a body of gallium nitride by which it is in contact with the amorphous silicon carbide layer.

Assignees

• Commissariat Energie Atomique
• Commissariat L Energie Atomique Et Aux Energies Alternatives

Inventors

• Amstatt Benoit
• Daudin Bruno-Jules

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/3208

  Silicon carbide · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title