Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

Patent metadata

Field	Value
Publication number	US-9698011-B2
Application number	US-201314064916-A
Country	US
Kind code	B2
Filing date	Oct 28, 2013
Priority date	Oct 26, 2012
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

The process for growing at least one semiconductor nanowire ( 3 ), said growth process comprising a step of forming, on a substrate ( 1 ), a nucleation layer ( 2 ) for the growth of the nanowire ( 3 ) and a step of growth of the nanowire ( 3 ). The step of formation of the nucleation layer ( 2 ) comprises the following steps: deposition onto the substrate ( 1 ) of a layer of a transition metal ( 4 ) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part ( 2 ) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire ( 3 ).

First claim

The invention claimed is:

1. A process for growing at least one semiconductor nanowire, said growing process comprising a step of forming, on a substrate, a nucleation layer for the growth of the nanowire and a step of growth of the nanowire, wherein the step of forming the nucleation layer comprises the following steps:
deposition onto the substrate of a layer of a transition metal chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta,
nitridation of at least part of the transition metal layer so as to form a transition metal nitride layer having a surface for the growth of the nanowire, the nitridation step being at two differing temperatures.

2. The process as claimed in claim 1 , wherein the step of nitridation of said transition metal layer is performed so as to at least partly modify the crystallographic structure of the transition metal layer toward a face-centered cubic crystallographic structure, which is especially oriented [111], or hexagonal, which is especially oriented [0001] or along the direction of the axis “C”, associated with the transition metal nitride layer.

3. The process as claimed in claim 1 ,
wherein the nitridation step comprises:
a first nitridation substep at least partly performed at a first temperature by imposing an injection of a nitridation gas at a first flow rate,
a second nitridation substep at least partly performed at a second temperature less than or equal to the first temperature by imposing an injection of the nitridation gas at a second flow rate different from the first flow rate.

4. The process as claimed in claim 3 , wherein the injected nitridation gas is ammonia, and wherein:
the first temperature is between 1000° C. and 1050° C.,
the first flow rate is between 500*V/8 sccm and 2500*V/8 sccm,
the second temperature is between 950° C. and 1050° C.,
the second flow rate is between 500*V/8 sccm and 2500*V/8 seem,
in which V is the total capacity in liters of a corresponding nitridation chamber.

5. The process as claimed in claim 3 , wherein the nitridation step is performed in a nitridation chamber placed at a pressure of between 50 mbar and 800 mbar.

6. The process as claimed in claim 3 , wherein the step of growth of the nanowire is performed after the second nitridation substep, or is initiated during the second nitridation substep.

7. The process as claimed in claim 1 , wherein the step of growth of the nanowire comprises a step of injection of Ga to form a gallium nitride nanowire, said nanowire extending from the growth surface of the nucleation layer.

8. The process as claimed in claim 1 ,
wherein, the substrate is silicon, the step of depositing the transition metal layer is configured such that the interdiffusion of silicon into the deposited transition metal layer is less than 10 nm and/or so as to conserve a non-silicided slice of the transition metal layer of at least 2 nm.

9. The process as claimed in claim 1 , wherein, with the deposited transition metal being chosen from Cr, V and Ti, said transition metal is deposited at a temperature below 100° C.

10. The process as claimed in claim 1 ,
wherein, the substrate is silicon, the step of depositing the transition metal layer comprises a preliminary step of determining the thickness of the transition metal layer to be deposited, comprising:
determining a first diffusion length of silicon into the transition metal layer during the future deposition of the transition metal layer as a function of the transition metal used and of the deposition temperature,
determining a second diffusion length of silicon into the transition metal layer during the future step of nitridation of the transition metal layer,
said thickness of the transition metal layer to be deposited being dependent on the desired thickness of the transition metal nitride layer and on a thickness of a slice of transition metal silicide obtained in the future transition metal layer from the first and second determined diffusion lengths.

11. The process as claimed in claim 1 , wherein it comprises a step in which the substrate is envisioned such that it has a resistivity of between 1 mΩ·cm and 100 mΩ·cm.

12. The process as claimed in claim 1 , wherein it comprises, before deposition of the transition metal layer, a step of deoxidation of a surface of the substrate intended to receive the transition metal layer.

13. A process for manufacturing an optoelectronic device, which comprises:
a step of performing the growth process as claimed in claim 1 ,
electrical doping of a first type of at least one end of the nanowire opposite the substrate,
the formation of an electrically doped element of a second type opposite the first type at the end of the nanowire opposite the substrate.

14. The process as claimed in claim 13 , wherein it comprises a step of forming quantum wells placed at the interface between the nanowire and the electrically doped element of the second type.

15. A process for growing at least one semiconductor nanowire, said growing process comprising a step of forming, on a substrate, a nucleation layer for the growth of the nanowire and a step of growth of the nanowire, wherein the step of forming the nucleation layer comprises the following steps:
deposition onto the substrate of a layer of a transition metal chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta,
nitridation of at least part of the transition metal layer so as to form a transition metal nitride layer having a surface for the growth of the nanowire,
wherein the nitridation step comprises:
a first nitridation substep at least partly performed at a first temperature by imposing an injection of a nitridation gas at a first flow rate,
a second nitridation substep at least partly performed at a second temperature less than or equal to the first temperature by imposing an injection of the nitridation gas at a second flow rate different from the first flow rate.

16. The process as claimed in claim 15 , wherein the injected nitridation gas is ammonia, and wherein:
the first temperature is between 1000° C. and 1050° C.,
the first flow rate is between 500*V/8 sccm and 2500*V/8 sccm,
the second temperature is between 950° C. and 1050° C.,
the second flow rate is between 500*V/8 sccm and 2500*V/8 seem,
in which V is the total capacity in liters of a corresponding nitridation chamber.

17. The process as claimed in claim 15 , wherein the nitridation step is performed in a nitridation chamber placed at a pressure of between 50 mbar and 800 mbar.

18. The process as claimed in claim 15 , wherein the step of growth of the nanowire is performed after the second nitridation substep, or is initiated during the second nitridation substep.

19. A process for growing at least one semiconductor nanowire, said growing process comprising a step of forming, on a substrate, a nucleation layer for the growth of the nanowire and a step of growth of the nanowire, wherein the step of forming the nucleation layer comprises the following steps:
deposition onto the substrate of a layer of a transition metal chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta,
nitridation of at least part of the transition metal layer so as to form a transition metal nitride layer having a surface for the growth of the nanowire,
wherein, the substrate is silicon, the step of depositing the transition metal layer is configured so that at least one of (i) the interdiffusion of silicon into the deposited transition metal layer is less than 10 nm and (ii) a non-silicided slice of the transition metal layer of at least 2 nm is conserved.

Assignees

• Commissariat Energie Atomique

Inventors

• Hyot Berangere
• Amstatt Benoit
• Armand Marie-Francoise

Classifications

• H10P14/279

  Vapour-liquid-solid growth · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P14/3462

  Nanowires · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3258

  Crystal orientation · CPC title