Electrochemical imprinting of micro- and nano-structures in porous silicon, silicon, and other semiconductors
US-2019384167-A1 · Dec 19, 2019 · US
of Group IV materials
of Group IV materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P50/613 |
| Official title | {of Group IV materials} |
| Display label | of Group IV materials |
| Total patents | 166 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 21 |
| 2016 | 13 |
| 2017 | 12 |
| 2018 | 9 |
| 2019 | 13 |
| 2020 | 28 |
| 2021 | 13 |
| 2022 | 16 |
| 2023 | 13 |
| 2024 | 11 |
| 2025 | 13 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Etching apparatus used for photo electrochemical etching of semiconductor substrate
US-10435808-B2 · Oct 8, 2019 · US
Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process
US-2019165170-A1 · May 30, 2019 · US
Semiconductor fabrication with electrochemical apparatus
US-2019096709-A1 · Mar 28, 2019 · US
Silicon on porous silicon
US-10181428-B2 · Jan 15, 2019 · US
Porous silicon post processing
US-10134837-B1 · Nov 20, 2018 · US
Spectrally and temporally engineered processing using photoelectrochemistry
US-10115599-B2 · Oct 30, 2018 · US
Spectrally and Temporally Engineered Processing using Photoelectrochemistry
US-2018301344-A1 · Oct 18, 2018 · US
Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US-2018286660-A1 · Oct 4, 2018 · US
Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US-10014170-B2 · Jul 3, 2018 · US
Etching Apparatus Used for Photo Electrochemical Etching of Semiconductor Substrate
US-2018112325-A1 · Apr 26, 2018 · US
Selective, electrochemical etching of a semiconductor
US-9922838-B2 · Mar 20, 2018 · US
Apparatus for cutting substrate and system for processing same
US-2018076089-A1 · Mar 15, 2018 · US
An electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process
US-2018061982-A1 · Mar 1, 2018 · US
Apparatus and method for processing a substrate
US-9852948-B2 · Dec 26, 2017 · US
Printing of three-dimensional metal structures with a sacrificial support
US-2017365484-A1 · Dec 21, 2017 · US
Apparatus for and method of processing substrate
US-9812331-B2 · Nov 7, 2017 · US
Method and apparatus for forming porous silicon layers
US-2017243774-A1 · Aug 24, 2017 · US
Methods for producing a cavity within a semiconductor substrate
US-9708182-B2 · Jul 18, 2017 · US
Selective, electrochemical etching of a semiconductor
US-2017170025-A1 · Jun 15, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P50/613?
- CPC H10P50/613 is the Cooperative Patent Classification code for “of Group IV materials.”
- How many patents are filed under CPC H10P50/613 (of Group IV materials)?
- Our database includes 166 publications tagged with this CPC code.
- Is patent activity under CPC H10P50/613 growing?
- Publication counts under this code: 11 in 2024 vs 13 in 2025 (latest complete years).