Semiconductor device having igbt and diode with field stop layer formed of hydrogen donor and helium
US-2019362975-A1 · Nov 28, 2019 · US
Diffusion lifetime killers
Diffusion lifetime killers · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P32/18 |
| Official title | {Diffusion lifetime killers} |
| Display label | Diffusion lifetime killers |
| Total patents | 187 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 9 |
| 2017 | 13 |
| 2018 | 13 |
| 2019 | 19 |
| 2020 | 12 |
| 2021 | 26 |
| 2022 | 21 |
| 2023 | 25 |
| 2024 | 18 |
| 2025 | 15 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-2019326118-A1 · Oct 24, 2019 · US
Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component
US-10439025-B2 · Oct 8, 2019 · US
Semiconductor device, and method of manufacturing semiconductor device
US-2019288078-A1 · Sep 19, 2019 · US
Semiconductor device
US-10396189-B2 · Aug 27, 2019 · US
Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium
US-10381225-B2 · Aug 13, 2019 · US
Semiconductor device
US-10374102-B2 · Aug 6, 2019 · US
Diode structure of a power semiconductor device
US-10340337-B2 · Jul 2, 2019 · US
Semiconductor device, and method of manufacturing semiconductor device
US-10312331-B2 · Jun 4, 2019 · US
Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
US-2019165102-A1 · May 30, 2019 · US
Method for processing a semiconductor region and an electronic device
US-10276362-B2 · Apr 30, 2019 · US
Semiconductor device
US-10256234-B2 · Apr 9, 2019 · US
Semiconductor device and manufacturing method of the same
US-2019096989-A1 · Mar 28, 2019 · US
Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a Recombination Zone, and Method for Producing such a Semiconductor Component
US-2019074352-A1 · Mar 7, 2019 · US
Semiconductor device and method of manufacturing the same
US-10204979-B2 · Feb 12, 2019 · US
Semiconductor device and method for manufacturing same
US-2018350899-A1 · Dec 6, 2018 · US
Semiconductor device
US-2018350960-A1 · Dec 6, 2018 · US
Semiconductor device
US-10121866-B2 · Nov 6, 2018 · US
Semiconductor device
US-10056450-B2 · Aug 21, 2018 · US
Semiconductor device with lifetime killers and method of manufacturing the same
US-2018233564-A1 · Aug 16, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P32/18?
- CPC H10P32/18 is the Cooperative Patent Classification code for “Diffusion lifetime killers.”
- How many patents are filed under CPC H10P32/18 (Diffusion lifetime killers)?
- Our database includes 187 publications tagged with this CPC code.
- Is patent activity under CPC H10P32/18 growing?
- Publication counts under this code: 18 in 2024 vs 15 in 2025 (latest complete years).