Formulations for producing indium oxide-containing layers, process for producing them and their use
US-9812330-B2 · Nov 7, 2017 · US
using liquid deposition
using liquid deposition · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/26 |
| Official title | using liquid deposition |
| Display label | using liquid deposition |
| Total patents | 140 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 19 |
| 2016 | 18 |
| 2017 | 24 |
| 2018 | 16 |
| 2019 | 9 |
| 2020 | 15 |
| 2021 | 12 |
| 2022 | 10 |
| 2023 | 7 |
| 2024 | 8 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Memory cell materials and semiconductor device structures
US-2017309820-A1 · Oct 26, 2017 · US
Separation method and manufacturing method of flexible device
US-2017309731-A1 · Oct 26, 2017 · US
Silicon germanium fins on insulator formed by lateral recrystallization
US-2017301697-A1 · Oct 19, 2017 · US
Fabrication of nanomaterial T-gate transistors with charge transfer doping layer
US-9748334-B1 · Aug 29, 2017 · US
Fabrication of nanomaterial t-gate transistors with charge transfer doping layer
US-2017244055-A1 · Aug 24, 2017 · US
Fabrication of nanomaterial t-gate transistors with charge transfer doping layer
US-2017244054-A1 · Aug 24, 2017 · US
Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures
US-9735359-B2 · Aug 15, 2017 · US
Substrate processing apparatus and substrate processing method
US-2017186599-A1 · Jun 29, 2017 · US
Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate
US-9691610-B2 · Jun 27, 2017 · US
Embedded gallium-nitride in silicon
US-9685329-B2 · Jun 20, 2017 · US
Electronic device having graphene-semiconductor multi-junction and method of manufacturing the electronic device
US-9685516-B2 · Jun 20, 2017 · US
Metal oxide semiconductor layer forming composition, and method for producing metal oxide semiconductor layer using same
US-2017162699-A1 · Jun 8, 2017 · US
Acoustic Measurement of Fabrication Equipment Clearance
US-2017138911-A1 · May 18, 2017 · US
Coating film forming method, coating film forming apparatus, and storage medium
US-2017140929-A1 · May 18, 2017 · US
Low vapor pressure aerosol-assisted cvd
US-2017137937-A1 · May 18, 2017 · US
Method of forming chalcogen compound light-absorption layer thin film for solar cell
US-2017141250-A1 · May 18, 2017 · US
Polymer, organic layer composition, and method of forming patterns
US-2017110328-A1 · Apr 20, 2017 · US
Manufacturing a submicron structure using a liquid precursor
US-9620625-B2 · Apr 11, 2017 · US
Method of forming silicon on a substrate
US-9595437-B2 · Mar 14, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/26?
- CPC H10P14/26 is the Cooperative Patent Classification code for “using liquid deposition.”
- How many patents are filed under CPC H10P14/26 (using liquid deposition)?
- Our database includes 140 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/26 growing?
- Publication counts under this code: 8 in 2024 vs 2 in 2025 (latest complete years).