Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate

Patent metadata

Field	Value
Publication number	US-9691610-B2
Application number	US-201414295204-A
Country	US
Kind code	B2
Filing date	Jun 3, 2014
Priority date	Jun 7, 2013
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.

First claim

What is claimed is:

1. A method for producing a Group III nitride semiconductor crystal, the method comprising:
forming a mask layer on an underlayer, to thereby form an exposed portion of the underlayer which is not covered with the mask layer, and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions;
growing a Group III nitride semiconductor crystal in a molten mixture containing at least Group III metal and Na; and
wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.

2. The method for producing a Group III nitride semiconductor crystal according to claim 1 , wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.

3. The method for producing a Group III nitride semiconductor crystal according to claim 2 , wherein the connecting portions are formed with a longitudinal direction thereof oriented at an angle of 5° or less from an m-axis of the underlayer.

4. The method for producing a Group III nitride semiconductor crystal according to claim 1 , the method further comprising:
forming a first mask layer on the underlayer;
growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture;
forming a second mask layer on the first Group III nitride semiconductor crystal; and
growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.

5. The method for producing a Group III nitride semiconductor crystal according to claim 2 , the method further comprising:
forming a first mask layer on the underlayer;
growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture;
forming a second mask layer on the first Group III nitride semiconductor crystal; and
growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.

6. The method for producing a Group III nitride semiconductor crystal according to claim 3 , the method further comprising:
forming a first mask layer on the underlayer;
growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture;
forming a second mask layer on the first Group III nitride semiconductor crystal; and
growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.

7. The method for producing a Group III nitride semiconductor crystal according to claim 4 , wherein the second mask layer is formed at a position perpendicular to a main surface of the mask layer as viewed from the exposed portion of the first mask layer.

8. The method for producing a Group III nitride semiconductor crystal according to claim 5 , wherein the second mask layer is formed at a position perpendicular to a main surface of the mask layer as viewed from the exposed portion of the first mask layer.

9. The method for producing a Group III nitride semiconductor crystal according to claim 1 , wherein the mask layer is formed through atomic layer deposition.

10. The method for producing a Group III nitride semiconductor crystal according to claim 1 , wherein the mask layer comprises Al 2 O 3 .

11. The method for producing a Group III nitride semiconductor crystal according to claim 1 , wherein the mask layer comprises at least one of ZrO 2 and TiO 2 .

12. A method for producing a Group III nitride semiconductor substrate, the method comprising:
forming a mask layer on an underlayer, and forming a seed crystal having an exposed portion of the underlayer which is not covered with the mask layer and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions;
growing a Group III nitride semiconductor crystal in a molten mixture containing at least Ga and Na;
separating the Group III nitride semiconductor crystal from the seed crystal; and
wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.

13. The method for producing a Group III nitride semiconductor substrate according to claim 12 , wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.

14. The method for producing a Group III nitride semiconductor substrate according to claim 13 , wherein the connecting portions are formed with a longitudinal direction thereof oriented at an angle of 5° or less from an m-axis of the underlayer.

15. The method for producing a Group III nitride semiconductor crystal according to claim 1 , wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.

16. The method for producing a Group III nitride semiconductor substrate according to claim 12 , wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.

17. The method for producing a Group III nitride semiconductor substrate according to claim 16 , wherein, in the separating of the Group III nitride semiconductor crystal, when separating the Group III nitride semiconductor crystal from the seed crystal, the components of the molten mixture are removed out from the non-crystal portions.

Assignees

• Toyoda Gosei Kk
• Toyoda Gosei Kk

Inventors

• Kumegawa Shohei
• Yakushi Yasuhide
• Nagai Seiji
• Moriyama Miki

Classifications

• H10P95/11

  Separation of active layers from substrates · CPC title

• H10P14/276

  Lateral overgrowth · CPC title

• H10P14/272

  using mask materials other than SiO2 or SiN · CPC title

• H10P14/26

  using liquid deposition · CPC title

• H10P14/3416 Primary

  Nitrides · CPC title