Semiconductor device
US-10784856-B2 · Sep 22, 2020 · US
the built-in component being PN junction diodes
the built-in component being PN junction diodes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/153 |
| Official title | {the built-in component being PN junction diodes} |
| Display label | the built-in component being PN junction diodes |
| Total patents | 122 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 15 |
| 2016 | 10 |
| 2017 | 9 |
| 2018 | 10 |
| 2019 | 13 |
| 2020 | 13 |
| 2021 | 9 |
| 2022 | 13 |
| 2023 | 10 |
| 2024 | 9 |
| 2025 | 7 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-10777545-B2 · Sep 15, 2020 · US
Electrostatic discharge protection semiconductor device
US-10629585-B2 · Apr 21, 2020 · US
Method of forming high-voltage silicon-on-insulator device with diode connection to handle layer
US-10522388-B1 · Dec 31, 2019 · US
BCD semiconductor device and method for manufacturing the same
US-10510747-B1 · Dec 17, 2019 · US
Electrostatic discharge guard ring with snapback protection
US-10504885-B2 · Dec 10, 2019 · US
Electrostatic discharge guard ring with snapback protection
US-2019279976-A1 · Sep 12, 2019 · US
Semiconductor device and method of manufacturing the same
US-2019259749-A1 · Aug 22, 2019 · US
Semiconductor device
US-2019237457-A1 · Aug 1, 2019 · US
Semiconductor device
US-10367056-B2 · Jul 30, 2019 · US
Electrostatic discharge guard ring with snapback protection
US-10347621-B2 · Jul 9, 2019 · US
Integrated bootstrap high-voltage driver chip and technological structure thereof
US-10340906-B2 · Jul 2, 2019 · US
Lateral insulated-gate bipolar transistor and method therefor
US-2019181262-A1 · Jun 13, 2019 · US
Semiconductor device and method of manufacturing the same
US-10276711-B2 · Apr 30, 2019 · US
Semiconductor integrated circuit
US-2019074828-A1 · Mar 7, 2019 · US
Lateral power MOSFET with non-horizontal RESURF structure
US-10186573-B2 · Jan 22, 2019 · US
Organic light emitting diode display having thin film transistor substrate using oxide semiconductor
US-10134877-B2 · Nov 20, 2018 · US
Semiconductor device
US-10128370-B2 · Nov 13, 2018 · US
Semiconductor device and method of manufacturing the same
US-2018308973-A1 · Oct 25, 2018 · US
Electrostatic discharge protection semiconductor device
US-2018269198-A1 · Sep 20, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/153?
- CPC H10D84/153 is the Cooperative Patent Classification code for “the built-in component being PN junction diodes.”
- How many patents are filed under CPC H10D84/153 (the built-in component being PN junction diodes)?
- Our database includes 122 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/153 growing?
- Publication counts under this code: 9 in 2024 vs 7 in 2025 (latest complete years).