Method of manufacturing silicon carbide semiconductor power device
US-2024021478-A1 · Jan 18, 2024 · US
using silicon carbide [SiC] technology
using silicon carbide [SiC] technology · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/035 |
| Official title | {using silicon carbide [SiC] technology} |
| Display label | using silicon carbide [SiC] technology |
| Total patents | 344 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 32 |
| 2016 | 35 |
| 2017 | 50 |
| 2018 | 42 |
| 2019 | 43 |
| 2020 | 44 |
| 2021 | 25 |
| 2022 | 16 |
| 2023 | 19 |
| 2024 | 17 |
| 2025 | 17 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Circuit incorporating multiple gate stack compositions
US-2016372462-A1 · Dec 22, 2016 · US
Power management chips and power management devices including the same
US-9525410-B2 · Dec 20, 2016 · US
Semiconductor device
US-2016343803-A1 · Nov 24, 2016 · US
Switching element with a series-connected junction FET (JFET) and MOSFET achieving both improved withstand voltage and reduced on-resistance
US-9502388-B2 · Nov 22, 2016 · US
Semiconductor device
US-9496393-B2 · Nov 15, 2016 · US
Semiconductor device having a breakdown voltage holding region
US-2016329397-A1 · Nov 10, 2016 · US
Semiconductor structure and manufacturing method thereof
US-9484346-B2 · Nov 1, 2016 · US
High-gain wide bandgap darlington transistors and related methods of fabrication
US-9478537-B2 · Oct 25, 2016 · US
Wide band gap semiconductor device
US-9472543-B2 · Oct 18, 2016 · US
Protection Devices with Trigger Devices and Methods of Formation Thereof
US-2016300827-A1 · Oct 13, 2016 · US
Semiconductor devices with non-implanted barrier regions and methods of fabricating same
US-9466674-B2 · Oct 11, 2016 · US
Semiconductor device
US-2016276474-A1 · Sep 22, 2016 · US
Method for manufacturing silicon carbide semiconductor device
US-9450068-B2 · Sep 20, 2016 · US
Reducing or eliminating pre-amorphization in transistor manufacture
US-2016268133-A1 · Sep 15, 2016 · US
Semiconductor device, and manufacturing method for same
US-9419117-B2 · Aug 16, 2016 · US
Semiconductor device having a breakdown voltage holding region
US-9406744-B2 · Aug 2, 2016 · US
Methods of fabricating multiple gate stack compositions
US-9378961-B2 · Jun 28, 2016 · US
Semiconductor Device and Method
US-2016181240-A1 · Jun 23, 2016 · US
Semiconductor device
US-2016163703-A1 · Jun 9, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/035?
- CPC H10D84/035 is the Cooperative Patent Classification code for “using silicon carbide [SiC] technology.”
- How many patents are filed under CPC H10D84/035 (using silicon carbide [SiC] technology)?
- Our database includes 344 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/035 growing?
- Publication counts under this code: 17 in 2024 vs 17 in 2025 (latest complete years).