Device for high voltage applications
US-11862673-B2 · Jan 2, 2024 · US
Breakdown diodes, e.g. avalanche diodes
Breakdown diodes, e.g. avalanche diodes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D8/20 |
| Official title | Breakdown diodes, e.g. avalanche diodes |
| Display label | Breakdown diodes, e.g. avalanche diodes |
| Total patents | 254 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 31 |
| 2016 | 39 |
| 2017 | 26 |
| 2018 | 31 |
| 2019 | 32 |
| 2020 | 23 |
| 2021 | 17 |
| 2022 | 19 |
| 2023 | 15 |
| 2024 | 7 |
| 2025 | 9 |
| 2026 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Resurf high voltage diode
US-9496333-B2 · Nov 15, 2016 · US
Semiconductor device
US-9496332-B1 · Nov 15, 2016 · US
Circuit protection device
US-9484337-B2 · Nov 1, 2016 · US
Semiconductor Device Including a Diode at Least Partly Arranged in a Trench
US-2016307885-A1 · Oct 20, 2016 · US
Transient overvoltage protection device
US-2016293591-A1 · Oct 6, 2016 · US
Bipolar ESD protection device with integrated negative strike diode
US-9461032-B1 · Oct 4, 2016 · US
Latch-up free vertical TVS diode array structure using trench isolation
US-9461031-B1 · Oct 4, 2016 · US
Semiconductor device including a diode arranged in a trench
US-9401355-B2 · Jul 26, 2016 · US
Semiconductor device
US-2016197095-A1 · Jul 7, 2016 · US
Semiconductor diode assembly
US-9385242-B2 · Jul 5, 2016 · US
Voltage control for crosspoint memory structures
US-2016189775-A1 · Jun 30, 2016 · US
Semiconductor device and method for producing semiconductor device
US-9368577-B2 · Jun 14, 2016 · US
Electrostatic discharge protection circuit
US-9337179-B2 · May 10, 2016 · US
Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate
US-9337299-B2 · May 10, 2016 · US
Avalanche Diode Having an Enhanced Defect Concentration Level and Method of Making the Same
US-2016111413-A1 · Apr 21, 2016 · US
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
US-9318623-B2 · Apr 19, 2016 · US
Esd protection circuit with plural avalanche diodes
US-2016079750-A1 · Mar 17, 2016 · US
Esd protection circuit with plural avalanche diodes
US-2016079228-A1 · Mar 17, 2016 · US
Electronic device including a diode
US-2016079226-A1 · Mar 17, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D8/20?
- CPC H10D8/20 is the Cooperative Patent Classification code for “Breakdown diodes, e.g. avalanche diodes.”
- How many patents are filed under CPC H10D8/20 (Breakdown diodes, e.g. avalanche diodes)?
- Our database includes 254 publications tagged with this CPC code.
- Is patent activity under CPC H10D8/20 growing?
- Publication counts under this code: 7 in 2024 vs 9 in 2025 (latest complete years).