Semiconductor Device Including a Diode at Least Partly Arranged in a Trench

Patent metadata

Field	Value
Publication number	US-2016307885-A1
Application number	US-201615189031-A
Country	US
Kind code	A1
Filing date	Jun 22, 2016
Priority date	Dec 16, 2011
Publication date	Oct 20, 2016
Grant date	—

Abstract

A semiconductor device includes a semiconductor body including a first trench extending into the semiconductor body from a first surface and a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench. The other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a pn junction. The semiconductor device further includes a conducting path through a sidewall of the first trench.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a semiconductor body including a first trench extending into the semiconductor body from a first surface; a diode including an anode region and a cathode region, wherein one of the anode region and the cathode region is at least partly arranged in the first trench, wherein the other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a on junction; and a conducting path through a sidewall of the first trench.

2 . The semiconductor device of claim 1 , further comprising a second trench at a lateral distance to the first trench and extending into the semiconductor body from the first surface, wherein the other one of the anode region and the cathode region is arranged at least partly in the second trench.

3 . The semiconductor device of claim 1 , wherein a direction of electrical breakdown current between the anode region and the cathode region is a lateral direction parallel to the first surface,

4 . The semiconductor device of claim 1 , wherein the diode includes a positive differential resistance of less than 20 mmΩ×mm 2 at a breakdown voltage V br >20V and at a temperature T=423K for a whole breakdown current range of 0.1 to 10 A/mm 2 .

5 . The semiconductor device of claim 1 , wherein at least one of the anode region and the cathode region is electrically connected with a pin.

6 . The semiconductor device of claim 1 , wherein:
the first semiconductor region is of a first conductivity type; and the one of the anode region and the cathode region includes a second semiconductor region. of a second conductivity type opposite the first conductivity type.

7 . The semiconductor device of claim 6 , wherein the second semiconductor region includes doped polysilicon.

8 . The semiconductor device of claim 6 , wherein the first trench region is filled with the second semiconductor region.

9 . The semiconductor device of claim 6 , wherein a first part of the second semiconductor region, at least one of a dielectric and a metal structure and a second part of the second. semiconductor region are arranged in this order along a lateral direction parallel to the first surface.

10 . The semiconductor device of claim 1 , further comprising:
a first contact area to the one of the anode region and the cathode region arranged on the first surface; and a second contact area to the other one of the anode region and the cathode region arranged on a second surface of the semiconductor body opposite the first surface.

11 . The semiconductor device of claim 10 , wherein:
the first contact area is electrically coupled to the one of the anode region and the cathode region at a top side of the one of the anode region and the cathode region; and the second contact area is electrically coupled to the other one of the anode region and the cathode region at a bottom side of the other one of the anode region and the cathode region.

12 . The semiconductor device of claim 1 , further comprising:
a first contact area to the one of the anode region and the cathode region arranged on the first surface; and a second contact area to the other one of the anode region and the cathode region arranged on the first surface.

13 . The semiconductor device of claim 1 , further comprising:
a buried layer adjoining a bottom side of the first semiconductor region, the buried layer including a concentration of dopants that is larger than a concentration of dopants of the first semiconductor region, wherein the buried layer and the first semiconductor region have the same conductivity type.

14 . The semiconductor device of claim 1 , wherein the diode is a Schottky diode and the one of the anode region and the cathode region is a Schottky contact material arranged in the first trench.

15 . The semiconductor device of claim 1 , further comprising a shallow trench isolation at the first surface in an area of the first semiconductor region.

16 . The semiconductor device of claim 1 , wherein a lateral width of the first trench region is larger in a bottom part of the first trench region than in a top part of the first trench region.

17 . The semiconductor device of claim 1 , further comprising an isolating layer at a bottom side of the first trench.

18 . The semiconductor device of claim 1 , further comprising:
a semiconductor substrate; and a p-doped semiconductor layer on the semiconductor substrate, wherein the first semiconductor region is arranged in the p-doped semiconductor layer.

19 . The semiconductor device of claim 1 , further comprising a functional element, and wherein the diode covers an area at the first surface in a range between 1000 μm 2 and 1 mm 2 and is configured to protect the functional element against ESD (electrostatic discharge).

20 . The semiconductor device of claim 1 , further comprising a semiconductor element, and wherein the diode is a clamping diode configured to clamp a voltage between two terminals of the semiconductor element.

21 . The semiconductor device of claim 1 , wherein the first semiconductor region extends parallel to a sidewall of the first trench, thereby constituting the pn junction.

22 . A semiconductor device, comprising:
a semiconductor body including a first trench region extending into the semiconductor body from a first surface of the semiconductor body; a diode including an anode region and a cathode region, wherein one of the anode region and the cathode region is at least partly arranged in the first trench region, and wherein the other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region; a field plate arranged on the first surface, the field plate overlapping a pn-junction comprising a p-doped region of the anode region abutting an n-doped region of the cathode region at the first surface; and a contact at the first surface and electrically connected to the one of the anode region and the cathode region at the first surface, wherein the field plate and the contact are electrically connected.

23 . The semiconductor device of claim 22 , further comprising an insulating layer arranged between and abutting the pn-junction at the first surface and the field plate.

24 . The semiconductor device of claim 22 , further comprising:
a second trench region extending into the semiconductor body from the first surface, wherein the other one of the anode region and the cathode region is arranged at least partly in the second trench region.

25 . The semiconductor device of claim 24 , wherein a first depth of the first trench region differs from a second depth of the second trench region.

26 . The semiconductor device of claim 24 , wherein the second trench region surrounds the first trench region at the first surface.

27 . The semiconductor device of claim 24 , wherein the first and second trench regions are arranged parallel to each other along the first surface.

28 . The semiconductor device of claim 22 , wherein the one of the anode region and the cathode region is a first electrode region arranged in the first trench region, the semico

Assignees

• Infineon Technologies Ag

Inventors

• Weyers Joachim
• Mauder Anton
• Hirler Franz
• Meiser Andreas
• Glaser Ulrich

Classifications

• H10D8/20

  Breakdown diodes, e.g. avalanche diodes · CPC title

• H10D62/129

  Cathode regions of diodes · CPC title

• H10D62/128

  Anode regions of diodes · CPC title

• H10D84/221

  of only diodes · CPC title

• H10D84/00

  Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers · CPC title