Semiconductor devices
US-12495597-B2 · Dec 9, 2025 · US
having recessed gate electrodes
having recessed gate electrodes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/877 |
| Official title | {having recessed gate electrodes} |
| Display label | having recessed gate electrodes |
| Total patents | 58 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 11 |
| 2016 | 6 |
| 2017 | 4 |
| 2018 | 7 |
| 2019 | 8 |
| 2020 | 4 |
| 2021 | 6 |
| 2022 | 4 |
| 2023 | 1 |
| 2024 | 4 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Dual-stage schottky barrier and method
US-2025318240-A1 · Oct 9, 2025 · US
Radiation doped semiconductor junctions
US-2025194194-A1 · Jun 12, 2025 · US
Nitride semiconductor device with field effect gate
US-12113110-B2 · Oct 8, 2024 · US
Semiconductor device
US-12051741-B2 · Jul 30, 2024 · US
Semiconductor devices
US-2024162307-A1 · May 16, 2024 · US
Semiconductor devices
US-11901421-B2 · Feb 13, 2024 · US
Nitride semiconductor device with field effect gate
US-2023006047-A1 · Jan 5, 2023 · US
Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices
US-11469312-B2 · Oct 11, 2022 · US
Semiconductor devices
US-2022093755-A1 · Mar 24, 2022 · US
Semiconductor device
US-2022085198-A1 · Mar 17, 2022 · US
Semiconductor devices
US-11217669-B2 · Jan 4, 2022 · US
Ohmic alloy contact region sealing layer
US-11145735-B2 · Oct 12, 2021 · US
Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices
US-2021313453-A1 · Oct 7, 2021 · US
Gate structure and method for producing same
US-11127863-B2 · Sep 21, 2021 · US
Insulated gate semiconductor device having trench termination structure and method
US-11081554-B2 · Aug 3, 2021 · US
Ohmic alloy contact region sealing layer
US-2021111263-A1 · Apr 15, 2021 · US
Semiconductor devices
US-2021028286-A1 · Jan 28, 2021 · US
Semiconductor device and manufacturing method thereof
US-10811371-B2 · Oct 20, 2020 · US
Semiconductor device and method for manufacturing the same
US-10790397-B2 · Sep 29, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/877?
- CPC H10D30/877 is the Cooperative Patent Classification code for “having recessed gate electrodes.”
- How many patents are filed under CPC H10D30/877 (having recessed gate electrodes)?
- Our database includes 58 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/877 growing?
- Publication counts under this code: 4 in 2024 vs 3 in 2025 (latest complete years).