Ohmic alloy contact region sealing layer

Patent metadata

Field	Value
Publication number	US-11145735-B2
Application number	US-201916599650-A
Country	US
Kind code	B2
Filing date	Oct 11, 2019
Priority date	Oct 11, 2019
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.

First claim

What is claimed is:

1. A Field Effect Transistor (FET) comprising:
a source contact in ohmic contact with a surface of an upper semiconductor layer;
a drain contact in ohmic contact with the surface of the upper semiconductor layer;
wherein the upper semiconductor layer has a notch in the surface of the semiconductor layer between the source contact and the drain contact, the notch terminating in a lower semiconductor layer;

a gate contact disposed in the notch and in contact with the lower semiconductor layer; and
an ohmic contact sealing layer disposed at: (a) an intersection between a sidewall of the source contact and the surface of the upper semiconductor layer; and (b) an intersection between a sidewall of the drain contact and the surface of the upper semiconductor layer;
wherein the ohmic contact sealing layer is spaced from the gate contact by a gap in the ohmic contact sealing layer between the source contact and the gate contact and a gap between the drain contact and the gate contact; and
wherein the ohmic contact sealing layer comprises a non-single crystal material.

2. The FET recited in claim 1 wherein the ohmic contact sealing layer is solid dielectric.

3. The FET recited in claim 1 wherein the ohmic contact sealing layer is metal.

4. The FET recited in claim 1 wherein a portion of the metal is disposed on the source contact and the upper semiconductor layer, a portion of the metal is disposed on the drain contact and the upper semiconductor layer, and the gate contact comprises a third portion of the metal.

5. The FET recited in claim 4 wherein the third portion of the metal is in Schottky contact with the lower semiconductor layer.

6. The Field Effect Transistor (FET) recited in claim 4 wherein the second portion and the third portion of the ohmic contact sealing, gate metal retard oxidation of the source contact at the intersection between the sidewall of the source contact and the first portion of the surface of the semiconductor and retard oxidation of the of the drain contact at the an intersection between the sidewall of the drain contact and the second portion of the surface of the semiconductor.

7. The FET recited in claim 6 wherein the third portion of the surface of the semiconductor is recessed below the first portion of the surface of the semiconductor and the second portion of the surface of the semiconductor.

8. The FET recited in claim 6 wherein the source contact and the drain contact comprises nickel.

9. The FET recited in claim 8 wherein the semiconductor comprises Gallium Arsenide.

10. A Field Effect Transistor (FET), comprising:
a semiconductor;
a source contact in ohmic contact with a first portion of a surface of the semiconductor;
a drain contact in ohmic contact with a second portion of the surface of the semiconductor;
a gate contact, disposed between the source contact and the drain contact, comprising a ohmic contact sealing, gate metal having a first portion disposed in Schottky contact with a third portion of the surface of the semiconductor, such third portion of the surface of the semiconductor being laterally spaced from both the first portion and the second portion of the surface of the semiconductor;
wherein the ohmic contact sealing, gate metal has a second portion disposed at an intersection of a sidewall of the source contact and the first portion of the surface of the semiconductor;
wherein the ohmic contact sealing, gate metal has a third portion disposed at an intersection between a sidewall of the drain contact and the second portion of the surface of the semiconductor; and
wherein the second portion of the ohmic contact sealing, gate metal and the third portion of the ohmic contact sealing, gate metal are laterally spaced from the first portion of the gate metal.

11. The FET recited in claim 10 wherein the third portion of the surface of the semiconductor is recessed below the first portion of the surface of the semiconductor and the second portion of the surface of the semiconductor.

12. The FET recited in claim 11 wherein the source contact and drain contact comprise nickel.

13. The FET recited in claim 12 wherein the semiconductor comprises Gallium Arsenide.

Assignees

• Raytheon Co

Inventors

• Duval Paul J
• Bettencourt John P
• Mcclymonds James W
• Alcorn Paul M
• Balas Ii Philip C
• Davis Michael S

Classifications

• H10P14/40 Primary

  of conductive or resistive materials · CPC title

• H10W74/131

  the semiconductor body being only partially enclosed · CPC title

• H10D62/85 Primary

  being Group III-V materials, e.g. GaAs · CPC title

• H10D30/877 Primary

  having recessed gate electrodes · CPC title

• H10D30/0614

  using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates · CPC title