Insulated gate semiconductor device having trench termination structure and method

Patent metadata

Field	Value
Publication number	US-11081554-B2
Application number	US-201816134598-A
Country	US
Kind code	B2
Filing date	Sep 18, 2018
Priority date	Oct 12, 2017
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A semiconductor device structure includes a region of semiconductor material comprising a first conductivity type, an active region, and a termination region. A first active trench structure is disposed in the active region, and a second active trench structure is disposed in the active region and laterally separated from the first active trench by an active mesa region having a first width. A first termination trench structure is disposed in the termination region and separated from the second active trench by a transition mesa region having a second width and a higher carrier charge than that of the active mesa region. In one example, the second width is greater than the first width to provide the higher carrier charge. In another example, the dopant concentration in the transition mesa region is higher than that in the active mesa region to provide the higher carrier charge. The semiconductor device structure exhibits improved device ruggedness including, for example, improve unclamped inductive switching (UIS) performance.

First claim

What is claimed is:

1. A semiconductor device structure comprising: a region of semiconductor material comprising a first conductivity type, an active region, and a termination region; a first active trench structure disposed in the active region; a second active trench structure disposed in the active region and laterally separated from the first active trench by an active mesa region having a first width, the active mesa region having a first doping concentration of the first conductivity type; a first termination trench structure disposed in the termination region and laterally separated from the second active trench by a transition mesa region having a second width and a second doping concentration of the first conductivity type; and a second termination trench disposed in the termination region and laterally separated from the first termination trench by a first termination mesa region having a third width and a third doping concentration of the first conductivity type, wherein: the second doping concentration is greater than the first doping concentration and the second width is greater than the first width.

2. The structure of claim 1 , further comprising:
a first base region comprising a second conductivity type opposite to the first conductive type disposed in the active mesa region;
a second base region comprising the second conductivity type in the transition mesa region; and
a third base region comprising the second conductivity type in the first termination mesa region.

3. The structure of claim 1 , further comprising:
a first doped region of the first conductivity type and having the second doping concentration disposed in the transition mesa region, wherein:
the first doped region is spaced apart from a first major surface of the region of semiconductor material and is laterally interposed between the first termination trench and the second active trench.

4. The structure of claim 1 , further comprising:
a base region of a second conductivity type opposite to the first conductivity type disposed in the active mesa region adjacent the first active trench; and
a source region of the first conductivity type disposed in the base region.

5. The structure of claim 1 , wherein:
the first active trench structure comprises:
a shield electrode separated from the region of semiconductor material by a first dielectric structure; and
a gate electrode separated from the region of semiconductor material by a second dielectric structure;

the first termination trench structure comprises:
a termination electrode separated from the region of semiconductor material by a third dielectric structure; and

the semiconductor device structure further comprises a conductive layer electrically connected to the shield electrode and the termination electrode.

6. The structure of claim 1 , wherein:
the first-termination trench structure comprises a continuous structure that completely surrounds the active region in a plan view.

7. The structure of claim 2 , wherein:
the third base region is electrically floating.

8. The structure of claim 7 , wherein:
the first base region and the second base region are electrically connected.

9. The structure of claim 2 , further comprising:
a source region within the first base region, wherein:
the second base region and the third base region are devoid of source regions.

10. The structure of claim 1 , wherein:
the second doping concentration is greater than the third doping concentration.

11. The structure of claim 1 , wherein:
the first doping concentration has a first peak doping concentration;
the second doping concentration has a second peak doping concentration; and
the second peak doping concentration is greater than the first peak doping concentration in range from about five percent (5%) to about fifty percent (50%).

12. A semiconductor device structure, comprising: a region of semiconductor material comprising a first conductivity type, a first major surface, a second major surface opposite to the first major, an active region, a termination region, and a transition region interposed between the active region and the termination region; active trench structures extending from the first major surface into the region of semiconductor material within the active region, wherein the active trench structures are laterally separated from each other by active mesa regions, wherein the active mesa regions have a first doping concentration of the first conductivity type; a termination trench structure extending from the first major surface into the region of semiconductor material within the termination region; a transition mesa region interposed between an outermost one of the active trench structures and the termination trench structure, wherein the transition mesa region comprises a second doping concentration of the first conductivity type that is greater than the first doping concentration; base regions comprising a second conductivity type opposite to the first conductive type disposed in at least some of the active mesa regions and the transition mesa region adjacent to the first major surface; and source regions comprising the first conductivity type disposed in the base regions in the active mesa regions but not in the transition mesa region.

13. The structure of claim 12 , wherein:
the active trench structures each comprise:
an active trench; and
a first electrode disposed within the active trench and separated from the region of semiconductor material by a first dielectric structure having a first thickness;

the termination trench structure comprises:
a termination trench; and
a second electrode disposed within the termination trench and separated from the region of semiconductor material by a second dielectric structure having a second thickness;

the active mesa regions each comprises a first width in a cross-sectional view; and
the transition mesa region comprises a second width in the cross-sectional view.

14. The structure of claim 13 , wherein:
the termination trench structure is an innermost one of a plurality of termination trench structures disposed in the termination region; and
the plurality of termination trench structures are separated from each other by termination mesa regions.

15. The structure of claim 12 , wherein:
the first doping concentration has a first peak doping concentration;
the second doping concentration has a second peak doping concentration; and
the second peak doping concentration is greater than the first peak doping concentration in range from about five percent (5%) to about fifty percent (50%).

16. The structure of claim 12 , further comprising:
a second termination trench structure disposed in the termination region and laterally separated from the termination trench structure by a first termination mesa region having a third width and a third doping concentration of the first conductivity type;
a first base region comprising a second conductivity type opposite to the first conductive type disposed in the active mesa regions;
a second base region comprising the second conductivity type in the transition mesa region; and
a third base region comprising the second conductivity type in the first termination mesa region, wherein:
the third base region is electrically floating; and
the first base region and the second base region are electrically connected.

17. A semiconductor device structure comprising: a region of semiconductor material comprising a first conductivity type, an active region, and a termination region; a first active trench struc

Assignees

• Semiconductor Components Ind Llc

Inventors

• Hossain Zia
• Asano Tetsuro
• Miyahara Syoji
• Sayama Yasuyuki

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D62/157

  Impurity concentrations or distributions · CPC title

• H10D84/146

  the built-in components being Schottky barrier diodes · CPC title