Semiconductor device and method of fabricating the same
US-2024014287-A1 · Jan 11, 2024 · US
having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289)
having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/026 |
| Official title | {having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289)} |
| Display label | having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289) |
| Total patents | 532 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 47 |
| 2016 | 40 |
| 2017 | 43 |
| 2018 | 59 |
| 2019 | 45 |
| 2020 | 42 |
| 2021 | 59 |
| 2022 | 64 |
| 2023 | 48 |
| 2024 | 46 |
| 2025 | 33 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
FinFETs with Strained Well Regions
US-2016372579-A1 · Dec 22, 2016 · US
Non-planar quantum well device having interfacial layer and method of forming same
US-9502568-B2 · Nov 22, 2016 · US
Semiconductor device
US-2016336444-A1 · Nov 17, 2016 · US
Vertical-type semiconductor devices and methods of manufacturing the same
US-9496277-B2 · Nov 15, 2016 · US
Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
US-9484460-B2 · Nov 1, 2016 · US
Double gated 4F2 dram CHC cell and methods of fabricating the same
US-9472461-B2 · Oct 18, 2016 · US
Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
US-9431520-B2 · Aug 30, 2016 · US
Semiconductor device with non-linear surface
US-2016204200-A1 · Jul 14, 2016 · US
Finfet device with a substantially self-aligned isolation region positioned under the channel region
US-2016190306-A1 · Jun 30, 2016 · US
Semiconductor devices
US-9362397-B2 · Jun 7, 2016 · US
Fin-type graphene device
US-2016087042-A1 · Mar 24, 2016 · US
Transistors and methods of manufacturing the same
US-9257508-B2 · Feb 9, 2016 · US
FinFETs with Strained Well Regions
US-2015380528-A1 · Dec 31, 2015 · US
Method for producing SGT-including semiconductor device
US-9224835-B2 · Dec 29, 2015 · US
Method of Manufacturing a Semiconductor Device Having a Rectifying Junction at the Side Wall of a Trench
US-2015349097-A1 · Dec 3, 2015 · US
GRAPHENE NANORIBBONS AND CARBON NANOTUBES FABRICATED FROM SiC FINS OR NANOWIRE TEMPLATES
US-2015333157-A1 · Nov 19, 2015 · US
Thin Film Transistor
US-2015318380-A1 · Nov 5, 2015 · US
Methods of forming substantially self-aligned isolation regions on finfet semiconductor devices and the resulting devices
US-2015294912-A1 · Oct 15, 2015 · US
FinFETs with strained well regions
US-9159824-B2 · Oct 13, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/026?
- CPC H10D30/026 is the Cooperative Patent Classification code for “having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289).”
- How many patents are filed under CPC H10D30/026 (having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289))?
- Our database includes 532 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/026 growing?
- Publication counts under this code: 46 in 2024 vs 33 in 2025 (latest complete years).