Semiconductor devices and methods of fabricating the same
US-2019312030-A1 · Oct 10, 2019 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/435 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 164 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 8 |
| 2017 | 13 |
| 2018 | 19 |
| 2019 | 28 |
| 2020 | 25 |
| 2021 | 22 |
| 2022 | 12 |
| 2023 | 10 |
| 2024 | 15 |
| 2025 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Substrate Resistor and Method of Making Same
US-2019280097-A1 · Sep 12, 2019 · US
Transistor Device with Gate Resistor
US-2019267487-A1 · Aug 29, 2019 · US
Switching device
US-2019260305-A1 · Aug 22, 2019 · US
Steep-switch field effect transistor with integrated bi-stable resistive system
US-2019252507-A1 · Aug 15, 2019 · US
Steep-switch field effect transistor with integrated bi-stable resistive system
US-2019252508-A1 · Aug 15, 2019 · US
Semiconductor devices and methods of fabricating the same
US-10361194-B2 · Jul 23, 2019 · US
Semiconductor device and manufacturing method thereof
US-10361189-B2 · Jul 23, 2019 · US
Transistor Device with a Field Electrode that Includes Two Layers
US-2019172917-A1 · Jun 6, 2019 · US
Vertical MOS transistor and fabricating method thereof
US-10269915-B2 · Apr 23, 2019 · US
Transistor device with a field electrode that includes two layers
US-10243051-B2 · Mar 26, 2019 · US
Semiconductor devices including resistors
US-10204901-B2 · Feb 12, 2019 · US
Power fet with a resonant transistor gate
US-2019035781-A1 · Jan 31, 2019 · US
Semiconductor device and manufacturing method thereof
US-2018358438-A1 · Dec 13, 2018 · US
Semiconductor device in a level shifter with electrostatic discharge (esd) protection circuit and semiconductor chip
US-2018358349-A1 · Dec 13, 2018 · US
Hybrid high electron mobility transistor and active matrix structure
US-10115773-B2 · Oct 30, 2018 · US
Vertical mos transistor and fabricating method thereof
US-2018308947-A1 · Oct 25, 2018 · US
Semiconductor Device Including a Gate Contact Structure
US-2018269296-A1 · Sep 20, 2018 · US
Semiconductor Devices Including Resistors
US-2018254271-A1 · Sep 6, 2018 · US
Semiconductor device in a level shifter with electrostatic discharge (ESD) protection circuit and semiconductor chip
US-10068892-B2 · Sep 4, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/435?
- CPC H01L29/435 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/435 (Electricity)?
- Our database includes 164 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/435 growing?
- Publication counts under this code: 15 in 2024 vs 5 in 2025 (latest complete years).