Hybrid high electron mobility transistor and active matrix structure

Patent metadata

Field	Value
Publication number	US-10115773-B2
Application number	US-201615356608-A
Country	US
Kind code	B2
Filing date	Nov 20, 2016
Priority date	Apr 27, 2015
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.

First claim

What is claimed is:

1. A high electron mobility field-effect transistor comprising:
an inorganic semiconductor layer;
a gate electrode;
first and second ohmic contacts operatively associated with the inorganic semiconductor layer, and
an organic gate barrier layer operatively associated with the gate electrode, the organic gate barrier layer being positioned between the gate electrode and the inorganic semiconductor layer and including one or more organic semiconductor layers operative to block electrons and holes.

2. The high electron mobility field-effect transistor of claim 1 , wherein the inorganic semiconductor layer comprises an n-type crystalline silicon layer.

3. The high electron mobility field-effect transistor of claim 2 , wherein the gate electrode includes a layer of high workfunction material.

4. The high electron mobility field-effect transistor of claim 3 , wherein the gate junction structure further includes a discrete organic passivation layer directly contacting the inorganic semiconductor layer.

5. The high electron mobility field-effect transistor of claim 3 , wherein the first organic semiconductor layer adjoins the gate electrode and the second organic semiconductor layer is positioned between the first organic semiconductor layer and the inorganic semiconductor layer.

6. The high electron mobility field-effect transistor of claim 3 , wherein the inorganic semiconductor layer comprises a crystalline silicon layer, further including a buried oxide layer adjoining the inorganic semiconductor layer.

7. The high electron mobility field-effect transistor of claim 1 , wherein the inorganic semiconductor layer is p-type.

8. The high electron mobility field-effect transistor of claim 1 , further including an organic passivation layer in direct contact with the inorganic semiconductor layer.

Assignees

• IBM

Inventors

• Afzali-Ardakani Ali
• Hekmatshoartabari Bahman
• Sadana Devendra K
• Shahrjerdi Davood

Classifications

• H05B45/60

  Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED] · CPC title

• H01L27/1251

  Electricity · mapped topic

• H01L29/432

  Electricity · mapped topic

• H01L51/105

  Electricity · mapped topic

• H01L29/408

  Electricity · mapped topic