Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
US-2016308041-A1 · Oct 20, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/32 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 799 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 44 |
| 2016 | 102 |
| 2017 | 117 |
| 2018 | 107 |
| 2019 | 105 |
| 2020 | 91 |
| 2021 | 70 |
| 2022 | 61 |
| 2023 | 51 |
| 2024 | 41 |
| 2025 | 10 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Secure chip with physically unclonable function
US-2016284647-A1 · Sep 29, 2016 · US
Dislocation in SiC semiconductor substrate
US-9450054-B2 · Sep 20, 2016 · US
Semiconductor device and method for manufacturing semiconductor device
US-2016268368-A1 · Sep 15, 2016 · US
Semiconductor device
US-2016260807-A1 · Sep 8, 2016 · US
Stacked nanosheets by aspect ratio trapping
US-9425291-B1 · Aug 23, 2016 · US
III-V CMOS integration on silicon substrate via embedded germanium-containing layer
US-9412744-B1 · Aug 9, 2016 · US
Semiconductor heterojunction device
US-9391187-B2 · Jul 12, 2016 · US
Method and system for transient voltage suppression
US-9379189-B2 · Jun 28, 2016 · US
Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material
US-9368604-B1 · Jun 14, 2016 · US
Method providing an epitaxial growth having a reduction in defects and resulting structure
US-9356096-B2 · May 31, 2016 · US
Aspect ratio trapping and lattice engineering for III/V semiconductors
US-9349809-B1 · May 24, 2016 · US
Aspect ratio trapping and lattice engineering for iii/v semiconductors
US-2016141374-A1 · May 19, 2016 · US
High voltage power semiconductor device on SiC
US-9337277-B2 · May 10, 2016 · US
Carbon doping semiconductor devices
US-2016126342-A1 · May 5, 2016 · US
Avalanche diode having an enhanced defect concentration level and method of making the same
US-9257523-B2 · Feb 9, 2016 · US
Composite substrate of gallium nitride and metal oxide
US-9224817-B2 · Dec 29, 2015 · US
Vertical gallium nitride transistors and methods of fabricating the same
US-9219137-B2 · Dec 22, 2015 · US
Reverse conducting IGBT
US-9214521-B2 · Dec 15, 2015 · US
Wafer strength by control of uniformity of edge bulk micro defects
US-2015357421-A1 · Dec 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/32?
- CPC H01L29/32 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/32 (Electricity)?
- Our database includes 799 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/32 growing?
- Publication counts under this code: 41 in 2024 vs 10 in 2025 (latest complete years).