Isolation structure of semiconductor device
US-9786543-B2 · Oct 10, 2017 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/76205 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 230 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 29 |
| 2016 | 28 |
| 2017 | 21 |
| 2018 | 25 |
| 2019 | 27 |
| 2020 | 24 |
| 2021 | 19 |
| 2022 | 17 |
| 2023 | 12 |
| 2024 | 12 |
| 2025 | 13 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Substrate processing method
US-2017243753-A1 · Aug 24, 2017 · US
Vertical gate all around (VGAA) devices and methods of manufacturing the same
US-9536738-B2 · Jan 3, 2017 · US
Isolated Semiconductor Layer Over Buried Isolation Layer
US-2016379866-A1 · Dec 29, 2016 · US
Method of manufacturing semiconductor integrated circuit device
US-2016329330-A1 · Nov 10, 2016 · US
Isolated semiconductor layer over buried isolation layer
US-9472571-B2 · Oct 18, 2016 · US
Integrated circuits using silicon on insulator substrates and methods of manufacturing the same
US-2016276210-A1 · Sep 22, 2016 · US
Methods and systems for using oxidation layers to improve device surface uniformity
US-9449866-B2 · Sep 20, 2016 · US
Insulating trench forming method
US-9437674-B2 · Sep 6, 2016 · US
Method for forming flash memory devices
US-9431405-B2 · Aug 30, 2016 · US
Stress memorization technique for strain coupling enhancement in bulk finFET device
US-9431521-B1 · Aug 30, 2016 · US
Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
US-2016240378-A1 · Aug 18, 2016 · US
Bulk semiconductor fins with self-aligned shallow trench isolation structures
US-9406545-B2 · Aug 2, 2016 · US
Systems and methods for eliminating seams in atomic layer deposition of silicon dioxide film in gap fill applications
US-9406544-B1 · Aug 2, 2016 · US
Air gaps between copper lines
US-9396989-B2 · Jul 19, 2016 · US
Mechanism of forming a trench structure
US-9396986-B2 · Jul 19, 2016 · US
FinFET semiconductor device having increased gate height control
US-9379135-B2 · Jun 28, 2016 · US
Mems having a cutout section on concave portion of a substrate
US-9376313-B2 · Jun 28, 2016 · US
Multiple-time programming memory cells and methods for forming the same
US-9373627-B2 · Jun 21, 2016 · US
Method of forming a semiconductor device including trench termination and trench structure therefor
US-2016172234-A1 · Jun 16, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/76205?
- CPC H01L21/76205 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/76205 (Electricity)?
- Our database includes 230 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/76205 growing?
- Publication counts under this code: 12 in 2024 vs 13 in 2025 (latest complete years).