Isolated semiconductor layer over buried isolation layer

Patent metadata

Field	Value
Publication number	US-9472571-B2
Application number	US-201414301848-A
Country	US
Kind code	B2
Filing date	Jun 11, 2014
Priority date	Apr 13, 2014
Publication date	Oct 18, 2016
Grant date	Oct 18, 2016

Abstract

An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

First claim

What is claimed is:

1. A method of forming an integrated circuit, comprising the steps:
providing a substrate comprising silicon-based single-crystal semiconductor material;
forming an isolation recess in the substrate;
forming sidewall insulators at sides of the isolation recess;
forming a buried isolation layer of thermal oxide at least 100 nanometers thick at a bottom of the isolation recess by a thermal oxidation process, so that the buried isolation layer does not extend up along interior lateral surfaces of the sidewall insulators, a top surface of the buried isolation layer being lower than a top surface of the substrate adjacent to the isolation recess; and
forming an isolated semiconductor layer over the buried isolation layer and separated from the substrate at lateral surfaces of the substrate above the buried isolation layer by the sidewall insulators, a top surface of the isolated semiconductor layer being substantially coplanar with the a top surface of the substrate adjacent to the buried isolation layer;
wherein the step of forming the isolated semiconductor layer comprises the steps:
forming a seed layer of single-crystal silicon-based semiconductor material on the top surface of the substrate by an epitaxy process;
forming a layer of polysilicon over the top surface of the substrate, contacting the seed layer and extending into the isolation recess over the buried isolation layer; and
performing a radiant-induced recrystallization process which heats the polysilicon so as to crystallize the polysilicon to form a single-crystal semiconductor layer over the buried isolation layer.

2. The method of claim 1 , wherein the step of forming the isolated semiconductor layer further comprises planarizing the single-crystal semiconductor layer down to a stop layer over the top surface of the substrate.

Assignees

• Texas Instruments Inc

Inventors

• Carothers Daniel Nelson
• Debord Jeffrey R

Classifications

• H10P14/6322

  Formation by thermal treatments (formation by plasma treatment H10P14/6319) · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title