Semiconductor device and a method for forming a semiconductor
US-10164019-B2 · Dec 25, 2018 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02444 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 145 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 17 |
| 2016 | 14 |
| 2017 | 16 |
| 2018 | 19 |
| 2019 | 18 |
| 2020 | 13 |
| 2021 | 11 |
| 2022 | 9 |
| 2023 | 7 |
| 2024 | 12 |
| 2025 | 8 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor devices comprising 2D-materials and methods of manufacture thereof
US-10157737-B2 · Dec 18, 2018 · US
One-dimensional nanostructure growth on graphene and devices thereof
US-10134865-B2 · Nov 20, 2018 · US
Foundation substrate for producing diamond film and method for producing diamond substrate using same
US-2018223447-A1 · Aug 9, 2018 · US
Method for making gallium nitride epitaxial layer by silicon substrate
US-2018195204-A1 · Jul 12, 2018 · US
Systems and methods for graphene based layer transfer
US-2018197736-A1 · Jul 12, 2018 · US
Epitaxial base
US-9953832-B2 · Apr 24, 2018 · US
Substrate with buffer layer for oriented nanowire growth
US-9947829-B2 · Apr 17, 2018 · US
Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof
US-2018068851-A1 · Mar 8, 2018 · US
Semiconductor epitaxial structure
US-9905726-B2 · Feb 27, 2018 · US
Method of forming nanostructure, method of manufacturing semiconductor device using the same, and semiconductor device including nanostructure
US-9899473-B2 · Feb 20, 2018 · US
Graphene layer formation at low substrate temperature on a metal and carbon based substrate
US-9875894-B2 · Jan 23, 2018 · US
Semiconductor devices comprising 2D-materials and methods of manufacture thereof
US-9859115-B2 · Jan 2, 2018 · US
Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
US-9812527-B2 · Nov 7, 2017 · US
Epitaxial base
US-2017316931-A1 · Nov 2, 2017 · US
Epitaxial base
US-9773664-B2 · Sep 26, 2017 · US
Semiconductor device, superconducting device, and manufacturing method of semiconductor device
US-9768372-B2 · Sep 19, 2017 · US
Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure
US-9748094-B2 · Aug 29, 2017 · US
Solid phase epitaxy of 3C-SiC on Si(001)
US-2017213891-A1 · Jul 27, 2017 · US
Devices including a diamond layer
US-9711534-B2 · Jul 18, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02444?
- CPC H01L21/02444 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02444 (Electricity)?
- Our database includes 145 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02444 growing?
- Publication counts under this code: 12 in 2024 vs 8 in 2025 (latest complete years).