Substrate with buffer layer for oriented nanowire growth

Patent metadata

Field	Value
Publication number	US-9947829-B2
Application number	US-201113805273-A
Country	US
Kind code	B2
Filing date	Jun 27, 2011
Priority date	Jun 24, 2010
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

The present invention provides a substrate ( 1 ) with a bulk layer ( 3 ) and a buffer layer ( 4 ) having a thickness of less than 2 μm arranged on the bulk layer ( 3 ) for growth of a multitude of nanowires ( 2 ) oriented in the same direction on a surface ( 5 ) of the buffer layer ( 4 ). A nanowire structure, a nanowire light emitting diode comprising the substrate ( 1 ) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer ( 4 ).

First claim

The invention claimed is:

1. A method for forming a structure comprising a plurality of nanowires oriented in the same direction, wherein the method comprises the steps of:
providing a bulk layer;
depositing a buffer layer with a thickness of less than 2 μm on the bulk layer, wherein the buffer layer is polycrystalline or amorphous and is formed by depositing two or more sub-layers, wherein the buffer layer is a non-epitaxial material selected from the group consisting of AlN and TiN, and combinations thereof, can withstand growth temperatures, and is grown with orientational properties that improve thermal properties of the structure; and
growing one or more GaN nanowires on the buffer layer.

2. The method of claim 1 , wherein the deposition of the buffer layer preserves the orientation of the bulk layer.

3. The method of claim 1 , wherein the deposition of the buffer layer alters the orientation of the bulk layer.

4. The method of claim 1 , wherein the buffer layer or one or more of the sub-layers are deposited by LPCVD, APCVD or PECVD.

5. The method of claim 1 , wherein the buffer layer or one or more of the sub-layers are deposited by ALD.

6. The method of claim 1 , wherein the buffer layer or one or more of the sub-layers are deposited by PVD.

7. The method of claim 1 , wherein the buffer layer or one or more of the sub-layers are grown by MOVPE or HVPE.

8. The method of claim 1 , further comprising forming a masking layer on the buffer layer, forming holes in the masking layer, and growing one or more nanowires on the buffer layer through the holes.

9. The method of claim 1 , wherein the buffer layer does not comprise silicon nitride.

Assignees

• Ohlsson Jonas
• Glo Ab

Inventors

• Ohlsson Jonas

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3216

  Nitrides · CPC title