Semiconductor devices comprising 2D-materials and methods of manufacture thereof

Patent metadata

Field	Value
Publication number	US-9859115-B2
Application number	US-201514621635-A
Country	US
Kind code	B2
Filing date	Feb 13, 2015
Priority date	Feb 13, 2015
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

First claim

What is claimed is:

1. A method, comprising:
epitaxially forming a first two-dimensional (2D) material layer on a substrate, wherein the substrate comprises sapphire; and
epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition,
wherein the epitaxially forming the first 2D material layer comprises a metal catalyst-free chemical vapor deposition process,
wherein the epitaxially forming the first 2D material layer comprises flowing a hydrogen-containing fluid and a carbon-containing fluid into a reaction chamber, the hydrogen-containing fluid being different than the carbon-containing fluid, and
wherein the first 2D material layer has a Raman spectrum with
a first peak between 1580 cm −1 and 1620 cm −1 and having a first intensity,
a second peak between 2650 cm −1 and 2750 cm −1 and having a second intensity,
a third peak between 1250 cm −1 and 1450 cm −1 and having a third intensity,
a ratio of the second intensity to the first intensity in a range between 1 and 1.5, and
the first intensity being greater than two times the third intensity.

2. The method of claim 1 , wherein the hydrogen-containing fluid is flowed at a rate in a range from about 30 standard cubic centimeters per minute (sccm) to about 80 sccm, and the carbon-containing fluid is flowed at a rate in a range from about 10 sccm to about 50 sccm.

3. The method of claim 1 , wherein the first 2D material layer comprises graphene.

4. The method of claim 1 , wherein the epitaxially forming the second 2D material layer comprises a second epitaxial chemical vapor deposition process.

5. The method of claim 4 , wherein the second epitaxial chemical vapor deposition process is performed at a temperature in a range from about 750 degrees Celsius to about 1000 degrees Celsius.

6. The method of claim 4 , wherein the second epitaxial chemical vapor deposition process is performed at a temperature in a range from about 600 degrees Celsius to about 700 degrees Celsius.

7. The method of claim 1 , wherein the second 2D material layer comprises a transition metal dichalcogenide (TMD) material.

8. The method of claim 7 , further comprising forming a drain contact and a source contact over portions of the TMD layer.

9. A method, comprising:
forming a first carbon-containing layer on a sapphire substrate;
forming a first transition metal dichalcogenide (TMD)-containing layer on the first carbon-containing layer; and
forming a second carbon-containing layer on the first TMD-containing layer,
wherein the forming the first carbon-containing layer comprises a metal catalyst-free chemical vapor deposition process, and
wherein the first carbon-containing layer has a Raman spectrum with
a first peak between 1580 cm −1 and 1620 cm −1 and having a first intensity,
a second peak between 2650 cm −1 and 2750 cm −1 and having a second intensity,
a third peak between 1250 cm −1 and 1450 cm −1 and having a third intensity,
a ratio of the second intensity to the first intensity in a range between 1 and 1.5, and
the first intensity being greater than two times the third intensity.

10. The method of claim 9 , further comprising forming a drain contact and a source contact over portions of the second carbon-containing layer.

11. The method of claim 9 , the forming the first carbon-containing layer and the forming the second carbon-containing layer comprise a first epitaxial chemical vapor deposition process.

12. The method of claim 9 , the forming the first TMD-containing layer comprises a second epitaxial chemical vapor deposition process.

13. The method of claim 9 , wherein the first carbon-containing layer physically contacts the sapphire substrate, and wherein the first TMD-containing layer physically contacts the first carbon-containing layer and the second carbon-containing layer.

14. The method of claim 9 , wherein the metal catalyst-free chemical vapor deposition process is performed at a temperature in a range from about 750 degrees Celsius to about 1000 degrees Celsius.

15. A method, comprising:
forming a first carbon-containing layer on a sapphire substrate; and
forming a first transition metal dichalcogenide (TMD)-containing layer on the first carbon-containing layer,
wherein the forming the first carbon-containing layer comprises a metal catalyst-free chemical vapor deposition process, and
wherein the first carbon-containing layer has a Raman spectrum with
a first peak between 1580 cm −1 and 1620 cm −1 and having a first intensity,
a second peak between 2650 cm −1 and 2750 cm −1 and having a second intensity,
a third peak between 1250 cm −1 and 1450 cm −1 and having a third intensity,
a ratio of the second intensity to the first intensity in a range between 1 and 1.5, and
the first intensity being greater than two times the third intensity.

16. The method of claim 15 , further comprising forming a drain contact and a source contact over portions of the TMD layer.

17. The method of claim 15 , wherein the forming the first carbon-containing layer comprises a first epitaxial chemical vapor deposition process, and the forming the first TMD-containing layer comprises a second epitaxial chemical vapor deposition process.

18. The method of claim 15 , wherein a portion of the sapphire substrate is free from the first carbon-containing layer.

19. The method of claim 15 , wherein the forming the first carbon-containing layer further comprises flowing a hydrogen-containing fluid and a carbon-containing fluid into a reaction chamber, the hydrogen-containing fluid being different than the carbon-containing fluid.

20. The method of claim 15 , wherein the first carbon-containing layer is formed over at least 60 percent of an entire lateral extent of the sapphire substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Univ Nat Taiwan

Inventors

• Lin Meng-Yu
• Lin Shih-Yen
• Lee Si-Chen
• Pan Samuel C

Classifications

• H10P14/3452

  Microstructure · CPC title

• H10P14/3246

  Monolayers · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3206

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title