Gate-all-around fin device
US-10147822-B2 · Dec 4, 2018 · US
using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence)
using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01G4/20 |
| Official title | using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence) |
| Display label | using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence) |
| Total patents | 178 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 14 |
| 2016 | 21 |
| 2017 | 15 |
| 2018 | 26 |
| 2019 | 21 |
| 2020 | 15 |
| 2021 | 13 |
| 2022 | 10 |
| 2023 | 19 |
| 2024 | 10 |
| 2025 | 12 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Gate-all-around fin device
US-2018337284-A1 · Nov 22, 2018 · US
Gate-all-around fin device
US-10090301-B2 · Oct 2, 2018 · US
Powder-based super dielectric material capacitor
US-10062522-B1 · Aug 28, 2018 · US
Gate-all-around fin device
US-9978874-B2 · May 22, 2018 · US
MLCC with ID Marker for Orientation
US-2018137977-A1 · May 17, 2018 · US
Gate-all-around fin device
US-2018076328-A1 · Mar 15, 2018 · US
Gate-all-around fin device
US-2018076329-A1 · Mar 15, 2018 · US
Gate-all-around fin device
US-9911852-B2 · Mar 6, 2018 · US
Super dielectric capacitor using scaffold dielectric
US-9870875-B1 · Jan 16, 2018 · US
Gate-all-around fin device
US-9818542-B2 · Nov 14, 2017 · US
Memory cell materials and semiconductor device structures
US-2017309820-A1 · Oct 26, 2017 · US
Multilayer polymer dielectric film
US-2017282474-A1 · Oct 5, 2017 · US
Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures
US-9735359-B2 · Aug 15, 2017 · US
Gate-all-around fin device
US-2017207340-A1 · Jul 20, 2017 · US
Gate-all-around fin device
US-2017207341-A1 · Jul 20, 2017 · US
Gate-all-around fin device
US-2017207333-A1 · Jul 20, 2017 · US
Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films
US-9691771-B2 · Jun 27, 2017 · US
Gate-all-around fin device
US-2017162569-A1 · Jun 8, 2017 · US
High temperature dielectric materials, method of manufacture thereof and articles comprising the same
US-2017162325-A1 · Jun 8, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01G4/20?
- CPC H01G4/20 is the Cooperative Patent Classification code for “using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence).”
- How many patents are filed under CPC H01G4/20 (using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence))?
- Our database includes 178 publications tagged with this CPC code.
- Is patent activity under CPC H01G4/20 growing?
- Publication counts under this code: 10 in 2024 vs 12 in 2025 (latest complete years).