Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films

Patent metadata

Field	Value
Publication number	US-9691771-B2
Application number	US-201615130675-A
Country	US
Kind code	B2
Filing date	Apr 15, 2016
Priority date	Apr 16, 2015
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming compositions.

First claim

We claim:

1. A Vanadium-containing film forming composition comprising a precursor having the formula

wherein each R, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and R 7 are independently H, an alkyl group, or R′ 3 Si, with each R′ independently being H or an alkyl group.

2. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu and R 1 -R 5 is H.

3. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is Me, and R 2 -R 5 is H.

4. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is Et, and R 2 -R 5 is H.

5. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is iPr, and R 2 -R 5 is H.

6. The Vanadium-containing film forming composition of claim 5 , wherein R is tBu, R 1 is tBu, and R 2 -R 5 is H.

7. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is SiMe 3 , and R 2 -R 5 is H.

8. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu; R 1 , R 3 , and R 5 are iPr; and R 2 and R 4 are H.

9. The Vanadium-containing film forming composition of claim 1 , wherein R 1 -R 5 are H and R 6 and R 7 are tAmyl.

10. The Vanadium-containing film forming composition of claim 9 , wherein R is tBu.

11. A method of forming a Vanadium-containing film, the method comprising introducing into a reactor having a substrate therein a vapor of the Vanadium-containing film forming composition of claim 1 ; and depositing at least part of the precursor onto the substrate.

12. The method of claim 11 , further comprising introducing a reactant into the reactor.

13. The method of claim 12 , wherein the reactant is selected from the group consisting of H 2 , H 2 CO, N 2 H 4 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.

14. The method of claim 12 , wherein the reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, N 2 O, NO 2 , oxygen radicals thereof, and mixtures thereof.

15. The method of claim 12 , wherein the Vanadium-containing film forming composition and the reactant are introduced into the reactor simultaneously and the reactor is configured for chemical vapor deposition.

16. The method of claim 12 , wherein the Vanadium-containing film forming composition and the reactant are introduced into the chamber sequentially and the reactor is configured for atomic layer deposition.

17. The method of claim 11 , wherein the substrate is a dielectric layer.

18. The method of claim 17 , wherein the substrate is ZrO 2 and the Vanadium-containing film forming composition is used to form a DRAM capacitor.

19. The method of claim 12 , further comprising plasma treating the reactant.

20. The method of claim 12 , wherein the Vanadium-containing film forming precursor is VCp(=NtBu)(N(tAmyl)-CH—CH—N(tAmyl)) or V(MeCp)(=NtBu)(N(tBu)-CH—CH—N(tBu)) and the reactant is NH 3 or O 3 .

Assignees

• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventors

• Lansalot-Matras Clément
• Noh Wontae

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H01G4/20

  using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence) · CPC title

• H01L27/1085 Primary

  Electricity · mapped topic

• C23C16/405

  of refractory metals or yttrium · CPC title