Semiconductor Devices with Superjunction Structures
US-2020251580-A1 · Aug 6, 2020 · US
by ion-implantation
by ion-implantation · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B31/22 |
| Official title | by ion-implantation |
| Display label | by ion-implantation |
| Total patents | 146 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 8 |
| 2016 | 13 |
| 2017 | 20 |
| 2018 | 9 |
| 2019 | 9 |
| 2020 | 18 |
| 2021 | 11 |
| 2022 | 5 |
| 2023 | 15 |
| 2024 | 14 |
| 2025 | 17 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for structuring a decorative of technical pattern in an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material
US-2019326088-A1 · Oct 24, 2019 · US
Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing semiconductor device
US-2019244814-A1 · Aug 8, 2019 · US
Methods of planarizing SiC surfaces
US-10319599-B2 · Jun 11, 2019 · US
Diamond single crystal and production method thereof, and single crystal diamond tool
US-10280531-B2 · May 7, 2019 · US
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
US-10230007-B2 · Mar 12, 2019 · US
Synthesis and processing of pure and NV nanodiamonds and other nanostructures
US-10211049-B2 · Feb 19, 2019 · US
Method for Manufacturing Semiconductor Devices with Superjunction Structures
US-2019043971-A1 · Feb 7, 2019 · US
Conversion of carbon into n-type and p-type doped diamond and structures
US-10196754-B2 · Feb 5, 2019 · US
Method for Manufacturing a Power Semiconductor Device Having a Reduced Oxygen Concentration
US-2019035909-A1 · Jan 31, 2019 · US
Sapphire composite base material and method for producing the same
US-2018361713-A1 · Dec 20, 2018 · US
Methods of Planarizing SiC Surfaces
US-2018350612-A1 · Dec 6, 2018 · US
Single-crystal diamond, tool using same, and method of producing single-crystal diamond
US-2018236515-A1 · Aug 23, 2018 · US
Method for manufacturing silicon-carbide semiconductor element
US-2018233358-A1 · Aug 16, 2018 · US
Method for producing composite wafer having oxide single-crystal film
US-2018175283-A1 · Jun 21, 2018 · US
Method for manufacturing silicon-carbide semiconductor element
US-9941116-B2 · Apr 10, 2018 · US
Production method of SiC crystal
US-9903047-B2 · Feb 27, 2018 · US
Epitaxial wafer and method for fabricating the same
US-9873954-B2 · Jan 23, 2018 · US
Method for growing monocrystalline silicon by using czochralski method
US-2018016702-A1 · Jan 18, 2018 · US
Multi-step ion implantation
US-9828668-B2 · Nov 28, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B31/22?
- CPC C30B31/22 is the Cooperative Patent Classification code for “by ion-implantation.”
- How many patents are filed under CPC C30B31/22 (by ion-implantation)?
- Our database includes 146 publications tagged with this CPC code.
- Is patent activity under CPC C30B31/22 growing?
- Publication counts under this code: 14 in 2024 vs 17 in 2025 (latest complete years).