Pvt-method and device for producing single crystals in a safe manner with regard to the process
US-2024376633-A1 · Nov 14, 2024 · US
Production method of SiC crystal
US9903047B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9903047-B2 |
| Application number | US-201615185690-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 17, 2016 |
| Priority date | Jun 22, 2015 |
| Publication date | Feb 27, 2018 |
| Grant date | Feb 27, 2018 |
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Abstract
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A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate on which La, Ce or Ti is deposited in part or whole of the surface or an SiC substrate in which La, Ce or Ti ion is implanted into part or whole of the surface.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate having deposited on the surface thereof La, Ce or Ti or an SiC substrate having implanted thereinto La, Ce or Ti ion. 2. The method according to claim 1 , wherein only in part of the surface of the SiC substrate, La, Ce or Ti is deposited or La, Ce or Ti ion is implanted. 3. The method according to claim 1 , wherein the La, Ce or Ti is deposited by a vapor deposition method, a sputtering method, or a CVD method. 4. The method according to any one of claim 1 , further comprising removing the deposited La, Ce or Ti after the vapor-phase growth. 5. The method according to claim 1 , further comprising applying an annealing treatment to the SiC substrate having implanted thereinto La, Ce or Ti ion, after the ion implantation and before the supply of the raw material gas. 6. The method according to any one of claim 1 , further comprising depositing La, Ce or Ti on or ion-implanting La, Ce or Ti into the surface of the SiC crystal in the middle of the vapor-phase growth.
Assignees
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Classifications
using chemical vapour deposition [CVD] · CPC title
characterised by treatments done before the formation of the materials · CPC title
P-type · CPC title
N-type · CPC title
being conductive materials · CPC title
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- What does patent US9903047B2 cover?
- A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate on which La, Ce or Ti is deposited in part or whole of the surface or an SiC substrate in which La, Ce or Ti ion is implanted into part or whole of the surface.
- Who is the assignee on this patent?
- Toyota Motor Co Ltd, Japan Fine Ceramics Ct
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).